HN7G01FU ,Multi Chip Discrete Device Power Management Switch Application Driver Circuit Application Interface Circuit ApplicationHN7G01FU TOSHIBA Multi Chip Discrete Device Preliminary HN7G01FU Power Management Switch Applic ..
HN7G02FU ,Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverte ..
HN9C01FE ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmO Torn dnvinng 2m hm'lf. in tn the saorwsr-thit, 2nd nytrnmn gunnr-v --- vv ..
HN9C01FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS Q2 (Ta =25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcu ..
HO1045 , 915.0 MHz SAW Oscillator
HOS-050 ,Fast Settling Video Operational AmplifierFEATURES
80ns Settling to 0.1%; 200ns lo 0.01%
100MHz Gain Bandwidth Product
55MHZ 3dB Bandwid ..
HY57V641620HGLT-HI , 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HGT-HI , 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V643220CT-47 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-47 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-55 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-55 , 4 Banks x 512K x 32Bit Synchronous DRAM
HN7G01FU
Multi Chip Discrete Device Power Management Switch Application Driver Circuit Application Interface Circuit Application
HN7G01FU TOSHIBA Multi Chip Discrete Device
HN7G01FU Power Management Switch Application
Driver Circuit Application
Interface Circuit Application Q1 (transistor): 2SA1955 equivalent Q2 (MOS-FET): 2SK1830 equivalent
Q1 (transistor) Maximum Ratings (Ta ��� � 25°C)
Q2 (MOS-FET) Maximum Ratings (Ta ��� � 25°C) ID
Q1, Q2 Common Ratings (Ta ��� � 25°C) Tstg �55~150 °C
Note 1: Total rating
Marking Pin Assignment (top view) Unit: mm
Weight: 6.8 mg (typ.)
