HN4A08J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
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HN4A08J
Transistor for low frequency small-signal amplification 2 in 1
HN4A08J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN4A08J Low Frequency Power Amplifer Applications
Power Switching Application High DC Current Gain : hFE = 100 to 320 Low Saturation Voltage : VCE(sat) = −0.4V (max)
(IC = −500mA , IB = −20mA)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Marking Equivalent Circuit (Top View) Weight: 0.014g (typ.)
Unit: mm 4
