HN3C01F ,RF 2-in-1 Hybrid TransistorsHN3CO1FTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TTV TUNER, VHF CONVERTER APPLICATION. Unit i ..
HN3C01FU ,RF 2-in-1 Hybrid TransistorsHN3CO1FUTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TTV TUNER, VHF CONVERTER APPLICATION Unit i ..
HN3C10F ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mmIncluding Two Devices in SM6 (Super Mini Type with 6 Leads)MAXIMUM RATINGS ( ..
HN3C10FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Q1, Q2) (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcu ..
HN3C10FU ,RF 2-in-1 Hybrid TransistorsHN3C1OFUTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER
HN3C12FU ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mm2.11010 Including Two Devices in U86 (Ultra Super Mini Type with 6 ' _T.csaA ..
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-8 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HN3C01F
RF 2-in-1 Hybrid Transistors
TOSHIBA HN3C01F
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
HN3C01F
TV TUNER, VHF CONVERTER APPLICATION.
TV VHF RF AMPLIFIER APPLICATION.
Unit in mm
q Including Two Devices in SM6 (Super Mini Type with 6Leads) 1.6-0.1
0 Low Reverse Transfer Capacitance : Cre=0.38pF(Typ.) El
HizhT ... F ..fr=14 MHT. "-“d H
a 1g ransition requency T 00 z( yp.) (w,'; E m "E,?: I? :4
MAXIMUM RATINGS Ta=25°C Q ' Q N g 2 -'''
( )( 1 2) tf- Tn
CHARACTERISTIC SYMBOL RATING UNIT 3 4 .9
Collector-Base Voltage VCBO 30 V $5? I ti'
Collector-Emitter Voltage VCEO 20 V ici. l _3_
Emitter-Base Voltage VEBO 3 V 1. COLLECTOR 1 (C1) g
Collector Current IC 50 mA g 11,'l'lfglo1, 2 Egg ;
Base Current 13 25 mA 4. EMITTER 2 (E2)
. . . 5. BASE 2 (B2)
Collector Power Dissipation Pc'' 300 mW 6. BASE 1 (B1)
J unction Temperature Tj 125 :C JEDEC -
Storage Temperature Range Tstg -55--125 C EIA J -
* Total TOSHIBA 2-3N1B
ELECTRICAL CHARACTERISTICS (Ta = 25°C) (01. o)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=25V, IE=0 - - 0.1 ph
Emitter Cut-off Current IEBO VEB=3V, 10:0 - - 1.0 PA
Collector-Emitter Breakdown - -
Voltage V(BR)CEO Ic=ImA, IB--0 20 - - V
DC Current Gain hFE VCE=10V, Ic=5mA 40 150 300 -
. . VCE=10V, Ic=5mA,
Transition Frequency fT f-- 200MHz 900 1400 - MHz
Reverse Transfer Capacitance Q1 Cre (1) VCB=10V, IE=O, f = 1MHz - 0.38 0.53 pF
Reverse Transfer Capacitance Q2 are (2) VCB=10V, IE=O, f = 1MHz - 0.31 0.46 pF
. V B=10V, I =5mA,
Collector-Base Time Constant Q1 Ccahb'(1) f=C30MHz C - 6 0 12 ps
. V B=10V, I =5mA,
Collector-Base Time Constant Q2 Ccebb'(2) f=C30MHz C - 5.5 11.5 ps
PIN ASSIGNMENT (TOP VIEW) MARKING
654 654TYPENAME
a1yi"(t W?
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
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