HN3B01F ,PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mm-+0.228-0.3t" A-tl 9 IQI:1.irriri' l. High Voltage and High Current: VCEO = ..
HN3B02FU ,Transistor Silicon PNP種PN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm Q1 High voltage : V = −50V CEOHigh current : I = −150mA (max) CHigh h ..
HN3C01F ,RF 2-in-1 Hybrid TransistorsHN3CO1FTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TTV TUNER, VHF CONVERTER APPLICATION. Unit i ..
HN3C01FU ,RF 2-in-1 Hybrid TransistorsHN3CO1FUTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TTV TUNER, VHF CONVERTER APPLICATION Unit i ..
HN3C10F ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mmIncluding Two Devices in SM6 (Super Mini Type with 6 Leads)MAXIMUM RATINGS ( ..
HN3C10FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Q1, Q2) (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcu ..
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-8 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HN3B01F
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
TOSHIBA HN3BOIF
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HN3B01llF
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Unit in mm
_ 2.8-0,3
Q1: .Li_.,
. High Voltage and High Current N N 2 g; i 1; CX)
:VCE0=50V, Ic=I50mA(Max.) ',5,ri E e"r m- i-i', 3?
oi H ‘3 2 5 tO
. High hFE '. hFE=120--400 o _ i TV--'-'
. Excellent hFE Linearity j H8,
: hFE(IC=0.1mA)/hFE (IC:2mA) =0.95 (Typ.) :1: I lo,
Q2 ~__ l I ll
a High Voltage and High Current I
1 VCE0= -50V, IC-- -150mA(Max.) COLLECTOR 1 (Cl)
EMITTER 1 (E1)
. High hFE : hFE=120~400 COLLECTOR 2 (C2)
EMITTER 2 (E2)
?‘P‘PWNF‘
. Excellent hFE Linearity M BASE 2 (B2)
t hFE (IC = -0.1mA)/hFE (Io: -2rnA) 20.95 (Typ.) S 6 BASE 1 (Bl)
JEDEC -
EIAJ -
Q1 MAXIMUM RATINGS (Ta = 25°C) TOSHIBA 2-3N1B
CHARACTERISTIC SYMBOL RATING UNIT Weight : 0.015g
11 -B 1
Co ector ase Vo tage VCBO 60 V MARKING
Collector-Er/ter Voltage VCEO 50 V
. Type Name
Emitter-Base Voltage VEBO 5 V 6 5 4
Collector Current IC 150 mA I=I l=l ,
Base Current I 30 mA
Q2 MAXIMUM RATINGS(Ta=25°C) 'f' 'r/ t'
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V EQUIVALENT CIRCUIT (TOP VIEW)
Collector-Emitter Voltage VCEO -50 V 6 5 4
Emitter-Base Voltage VEBO -5 V = = n
Collector Current IC -150 mA Q1 LéQZ
Base Current IB -30 mA
txi txt txi
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-04-10 1/5
TOSHIBA HN3BO1F
Q1, Q2 COMMON MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC* 300 mW
Junction Temperature Ti 125 "C
Storage Temperature Range Tstg -55-125 T
* Total Rating
Q1 ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 60V, IE = 0 - - 0.1 ,uA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 0.1 ,uA
DC Current Gain hFE VCE = 6V, IC = 2mA 120 - 400
Collector-Emitter
Saturation Vol tage VCE(sat) IC - 100mA, IB - 10mA - 0.1 0.25 V
Transition Frequency fT VCE = 10V, IC = 1mA - 150 - MHz
. VCB=10V, IE=0
Collector Output Capacitance Cob f=1MHz - 2 - pl?
Q2 ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -50V, IE =0 - - -0.1 ,uA
Emitter Cut-off Current IEBO VEB = -5V, IC =0 - - -0.1 [11A
DC Current Gain hFE VCE = -6V, IC = -2rnA 120 - 400
Collector-Emitter - -
Saturation Vol tage VCE(sat) IC - - 100mA, IB - - lOmA - - 0.1 - 0.3 V
Transition Frequency fT VCE = - 10V, IC = - lmA - 120 - MHz
. VCB= -10V, IE=0
Collector Output Capacitance Cob f=1MHz - 4 - pF
1997-04-10 2/5
TOSHIBA
Q1 (NPN TRANSISTOR)
IC - VCE
5.0 COMMON EMITTER
a" Ta=25°C
g 200 3.0 2.0
0 1 2 3 4 5 6 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON EMITTER
IC/IB = 10
Ta = 100°C
VOLTAGE VCE(sat)
COLLECTOR-EMI’I‘TER SATURATION
0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT 10 (mA)
COMMON EMITTER
VCE = 10V
1000 Ta = 25°C
TRANSITION FREQUENCY 1T (MHz)
0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT 1C (mA)
DC CURRENT GAIN hFE
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
BASE CURRENT 13
HN3BO1F
hFE - IC
COMMON EMITTER
Ta = 1 00''C
VCE = 6V
0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT 10 (mA)
VBE(sat) - IC
COMMON EMITTER
IC / IB = 10
Ta = 25°C
on 0.3 1 3 10 30 100 300
COLLECTOR CURRENT 10 (mA)
113 - VBE
COMMON EMITTER
1000 VCE = 6V
o 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
1997-04-10 3/5
TOSHIBA
HN3BO1F
Q2 (PNP TRANSISTOR)
IC - VCE
COMMON EMITTER
a Ta=25°C
g -200 IE
E -160
D -120
0 - 1 - 2 - 3 - 4 - 5 - 6 - 7
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
[i' COMMON EMITTER
C" -fhlf =
av 0.3 IC/IB IO
Ho T =1 0
ics -0.1 a 000
mg 0.05
f?,),'..":',
H> -25
8 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT IC (mA)
fT - IC
"it COMMON EMITTER
E VCE---10v
V 1000
Ta=25°C
TRANSITION FREQUE NCY 01*
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT 1C (mA)
hFE - IC
COMMON EMITTER
Ta = 100°C
DC CURRENT GAIN hFE
D-I ca
-0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT 1C (mA)
VBE(sat) - IC
COMMON EMITTER
-5 IC/IB=10
-3 Ta=25°C
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
9 .0 |
W U! D-l
-0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT 10 (mA)
13 - VBE
COMMON EMITTER
-500 VCE-- -6V
fi-loo
39 -50
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE VBE (V)
1997-04-10 4/5
TOSHIBA HN3BO1F
(Q1, Q2 COMMON)
Pc* - Ta
COLLECTOR POWER DISSIPATION Pc*
0 25 50 75 100 125
AMBIENT TEMPERATURE Ta (°C)
*: Total Rating
1997-04-10 5/5
www.ic-phoenix.com
.
