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HN2S02JETOSHIBAN/a31669avaiSmall-signal Schottky barrier diode


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HN2S02JE
Small-signal Schottky barrier diode
HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S02JE

High-speed Switching Applications HN2S02JE is composed of two independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). : Unit rating (Total rating = unit rating × 1.5)
** :Total rating
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C)

Pin Assignment (Top View) Marking

Weight: 0.003g (typ.)
Unit: mm5
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