HN2S02FU ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S02JE ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S03FE ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S03FU ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S03T ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition Min ..
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HN2S02FU
Small-signal Schottky barrier diode
HN2S02FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S02FU High Speed Switching Application HN2S02FU is composed of 3 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). :This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one.
** :Total rating
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) Weight: 6.2 mg (typ.)
Unit: mm
