HN2S01FU ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching ApplicationHN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mmLow Voltage High ..
HN2S02FU ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S02JE ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S03FE ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S03FU ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S03T ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition Min ..
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HN2S01FU
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S01FU Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse current: VF = 0.23V (typ.) @IF = 5mA
Maximum Ratings (Ta = 25��� �C) : This is maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the maximum ratings per diodes is 75 � of the single diode one.
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25��� �C) ― VR = 0, f = 1MHz ― 20 40
Weight: 6.2mg
Unit: mm
