HN2S01F ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching ApplicationHN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Swit ..
HN2S01F ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching ApplicationHN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Swit ..
HN2S01FU ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching ApplicationHN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mmLow Voltage High ..
HN2S02FU ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S02JE ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S03FE ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-8 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HN2S01F
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S01F Low Voltage High Speed Switching Application HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V (typ.) @IF = 5mA
Maximum Ratings (Ta = 25��� �C) : This is maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the maximum ratings per diodes is 75 � of the single diode one.
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25��� �C)
VF (1) ― VR = 0, f = 1MHz ― 20
Weight: 0.015g
Unit in mm
