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HN2S01FTOSHIBAN/a15000avaiDiode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
HN2S01FTOSN/a3000avaiDiode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application


HN2S01F ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching ApplicationHN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Swit ..
HN2S01F ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching ApplicationHN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Swit ..
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HN2S01F
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S01F

Low Voltage High Speed Switching Application HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V (typ.) @IF = 5mA
Maximum Ratings (Ta = 25�
�� �C) : This is maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the maximum ratings per diodes is 75 � of the single diode one.
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25�
�� �C)
VF (1) ― VR = 0, f = 1MHz ― 20
Weight: 0.015g
Unit in mm
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