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HN2D01JE
Switching diode
HN2D01JE TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01JE Ultra High Speed Switching Application The HN2D01JE is composed of 2 independent diodes. Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating; total rating = unit rating × 1.5
**: Total rating.
Electrical Characteristics (Ta = 25°C) Weight: 0.003 mg (typ.)
Unit: mm
