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HN2D01FUTOSN/a1800avaiDiode Silicon Epitaxial Planar Type Ultra High Speed Switching Application


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HN2D01FU
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01FU

Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)
Pin Assignment (Top View) Marking

Maximum Ratings (Ta = 25�
�� �C) : This is maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the maximum ratings per diodes is 75 � of the single diode one.
Weight: 6.2mg
Unit in mm
000707EAA1
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