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HN2D01F
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01F Ultra High Speed Switching Application HN2D01F is composed of 3 independent diodes. Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5µF (typ.)
Maximum Ratings (Ta = 25°C) (*) This is maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the maximum ratings
per diodes is 75 %f the single diode one.
Electrical Characteristics (Q1, Q2, Q3 Common Ta = 25°C) VF (1) ― IF = 10mA (Fig.1)
Weight: 0.015g
Unit in mm
