HN2C12FU ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mm2.11010 Including Two Devices in U86 (Ultra Super Mini Type with 6 ' _T.csaA ..
HN2D01F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Applicatio ..
HN2D01FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mmUltra High Speed Switchi ..
HN2D01JE ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
HN2D02FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Unit: mmUltra High Speed Switching ..
HN2D02FUTW1T1 ,Ultra High Speed Switching DiodesELECTRICAL CHARACTERISTICS (T = 25C)ACharacteristic Symbol Condition Min Max UnitReverse Voltage L ..
HY29LV400TT-55 , 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HN2C12FU
RF 2-in-1 Hybrid Transistors
TOSHIBA HN2C12FU
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
HN2C12FU
l/HF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
2.1 -+0.1
0 Including Two Devices in US6 (Ultra Super Mini Type with 6 1.25h0.1
_ . , .
Leads) l
MAXIMUM RATINGS (Ta=25°C) N - li? 1 - , E] m
ai ei' 1''-rrs--l-E, gt
CHARACTERISTIC SYMBOL RATING UNIT tl g li', 2 5 'd.
Collector-Base Voltage VCBO 20 V o EsE I $_-
Collector-Emitter Voltage VCEO 10 V I 3
Emitter-Base Voltage VEBO 1.5 V iii' I Ct',,
Base Current IB 7 mA g f i ii g
Collector Current IC 15 mA i) -
Collector Power Dissipation PC'' 200 mW g,
Junction Temperature Tj 125 C 1. EMITTER 1 (E 1)
Storage Temperature Range Tseg -55--125 "C 2. EMITTER 2 (E2)
3. BASE 2 (B2)
* : Total 4. COLLECTOR 2 (c2)
MARKING PIN ASSIGNMENT (TOP VIEW) ' EéiEELTOR 1 E2];
6 5 4 Type Name 6 5 4 JEDEC -
H Fl , Fl Fl Fl EIAJ -
W P a)-7a2 TOSHIBA
I: I21 I: tai tat d
1 2 3 1 2 3
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=10V, IE=0 - - 1 PA
Emitter Cut-off Current IEBO VEB=1V, Iczo - - 1 PA
DC Current Gain hFE VCE=6V, 10:7mA 50 - 160 -
Transition Frequency fT VCE=6V, Ic=7mA 7 10 - GHz
Insertion Gain iSZIei2 VCE=6V, Ic=7mA, f = 2GHz 4 7 - dB
Noise Figure NF VCE=6V, 1C=3rnA, f = 2GHz - 1.8 3 dB
Reverse Transfer Capacitance Cre - 0.4 0.9 pF
Q1 VCB=10V, IE=0, f=1MHz
T f . Note
Reverse rans er Capacitance Cre ( ) - 0.35 0.85 pF
(Note) ore is measured by 3 terminal method capacitance bridge.
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
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