HN1L02FU ,Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsHN1L02FU TOSHIBA Field Effect Transistor Silicon N·P Channel MOS Type HN1L02FU High Speed Switchin ..
HN1L03FU ,Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V Q2: Vth =−0.5~−1.5V Hig ..
HN1V01H ,Variable Capacitance Diode AM Radio Band Tuning ApplicationsApplications Unit: mm High capacitance ratio: C1 V/C8 V = 19.5 (typ.) High Q: Q = 200 (min) ..
HN27512P-25 , 512K (64K X 8 BIT ) UV AND OTP EPROM
HN27C101AFP-15 , 1m UV and OTP eprom
HN27C101AG-10 , 1m UV and OTP eprom
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
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HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1L02FU
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications
HN1L02FU
TOSHIBA Field Effect Transistor Silicon N·P Channel MOS Type
HN1L02FU High Speed Switching Applications Analog Switch Applications
Q1, Q2 common 2.5V gate drive Low threshold voltage
Q1: Vth = 0.5~1.5V Q2: Vth =−0.5~−1.5V High speed Small package
Q1 Maximum Ratings (Ta = 25��� �C) Rating ID 50
Q2 Maximum Ratings (Ta = 25��� �C) Rating ID
Maximum Ratings (Q1, Q2 Common) (Ta = 25����C) Rating Tstg −55~150 °C
* Total rating
Weight: 6.8mg
Marking
Equivalent Circuit (Top View) 000707EAA2
