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HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
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HN1D03F
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
HN1D03F
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D03F Ultra High Speed Switching Application Built in anode common and cathode common.
Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total capacitance Q1, Q2: CT = 0.9pF (typ.)
Unit 2 Low forward voltage Q3, Q4: VF (3) = 0.92V (typ.) Fast reverse recovery time Q3, Q4: trr = 1.6ns (typ.) Small total capacitance Q3, Q4: CT = 2.2pF (typ.)
Unit 1, Unit 2 Common Maximum Ratings (Ta = 25��� �C)
(*) This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Maximum Ratings per diode is
75% of the single diode one.
Marking Pin Assignment (Top View) Weight: 0.015g
Unit: mm