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HN1D01F
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
HN1D01F
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01F Ultra High Speed Switching Application Small package Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25°C) (*) This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the
case of using Unit 1 and Unit 2 independently or simultaneously, the
Maximum Ratings per diode is 75% of the single diode one.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C) Weight: 0.015g
Unit in mm
