HN1C07F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Symbol Test Condition MinTyp. ..
HN1C26FS ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitCollec ..
HN1D01F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application ..
HN1D01FE ,Switching diodeElectrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C) TestCharacteristic Symbol Test Condit ..
HN1D01FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Applicatio ..
HN1D02F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Unit: mmUltra High Speed Switching App ..
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1C07F
Transistor for low frequency small-signal amplification 2 in 1
HN1C07F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C07F Audio Frequency Small Power Amplifier Applications
Driver Stage Amplifier Applications
Switching applications Excellent Currrent gain(hFE ) linearity
: hFE(2) = 25 (min) at VCE = 6V, IC = 400mA
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Marking Equivalent Circuit (Top View) Weight: 0.015g (Typ.)
Unit: mm56
