HN1B04F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics Q1 (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max Uni ..
HN1B04FE ,Transistor for low frequency small-signal amplification 2 in 1Absolute Maximum Ratings (Ta = 25°C) 6 5 4 Characteristic Symbol Rating Unit Collector power dissi ..
HN1C01F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150m ..
HN1C01FE ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN1C01FU ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150m ..
HN1C05FE ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ ..
HX8802-C , CVBS
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1B04F
Transistor for low frequency small-signal amplification 2 in 1
HN1B04F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B04F Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Switching application Q1:
z Excellent hFE linearity
: hFE(2) = 25 (min) at VCE = −6V, IC = −400mA
Q2:
z Excellent hFE linearity
: hFE(2) = 25 (min) at VCE = 6V, IC = 400mA
Q1 Absolute Maximum Ratings (Ta = 25°C)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Total rating. 200mW per element must be exceeded.
Weight: 0.015g (typ.)
Unit: mm
