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HGTP2N120CNFAIRCHILN/a100avai13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CNFAIRCHILDN/a32000avai13A, 1200V, NPT Series N-Channel IGBT


HGTP2N120CN ,13A, 1200V, NPT Series N-Channel IGBTfeatures of MOSFETs and bipolar transistors. This device • Short Circuit Ratinghas the high input i ..
HGTP2N120CN ,13A, 1200V, NPT Series N-Channel IGBTFeatures13A, 1200V, NPT Series N-Channel IGBToThe HGTD2N120CNS, HGTP2N120CN, and • 13A, 1200V, T = ..
HGTP3N60A4 ,600V, SMPS Series N-Channel IGBTapplications operating at high frequencies where low  Temperature Compensating SABER™ Modelconduct ..
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HGTP7N60B3 ,14A, 600V, UFS Series N-Channel IGBTsapplications Packagingoperating at moderate frequencies where low conduction JEDEC TO-220ABlosses a ..
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HGTP2N120CN
13A, 1200V, NPT Series N-Channel IGBT
HGTD2N120CNS, HGTP2N120CN,
HGT1S2N120CNS
13A, 1200V, NPT Series N-Channel IGBT

The HGTD2N120CNS, HGTP2N120CN, and
HGT1S2N120CNS are
on-
unch
hrough (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49313.
Symbol
Features
13A, 1200V, T
= 25 1200V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T
= 150 Short Circuit Rating Low Conduction Loss Avalanche Rated
Temperature Compensating
SABER™ Model
Thermal Impedance
SPICE Model
Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
JEDEC TO-252AA
JEDEC TO-263AB
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120CNS9A.
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
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