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HMC288MS8 , 2 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz
HMC288MS8E , 2 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz
HMC291 , 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz
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HMC320MS8GE , GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz
HGTG40N60B3
70A, 600V, UFS Series N-Channel IGBT
HGTG40N60B3
70A, 600V , UFS Series N-Channel IGBTThe HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
C and 150
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Formerly Developmental Type TA49052.
Symbol
Features 70A, 600V, T
= 25 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 100ns at T
= 150 Short Circuit Rating Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Ordering InformationNOTE: When ordering, use the entire part number.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
