HGTG30N60B3D ,60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFeaturesGo• 60A, 600V, T =25 CC 600V Switching SOA CapabilityEo Typical Fall Time........ 90ns at ..
HGTG40N60A4 ,600V, SMPS Series N-Channel IGBTfeatures of a MOSFET and a • 200kHz Operation At 390V, 20Abipolar transistor. This device has the h ..
HGTG40N60A4 ,600V, SMPS Series N-Channel IGBT
HGTG40N60B3 ,70A, 600V, UFS Series N-Channel IGBTFeaturesoThe HGTG40N60B3 is a MOS gated high voltage switching • 70A, 600V, T = 25 CCdevice combini ..
HGTG40N60B3 ,70A, 600V, UFS Series N-Channel IGBTfeatures of MOSFETs and bipolar • 600V Switching SOA Capabilitytransistors. The device has the high ..
HGTG7N60A4 ,600V, SMPS Series N-Channel IGBTElectrical Specifications T = 25 C, Unless Otherwise SpecifiedJPARAMETER SYMBOL TEST CONDITIONS MIN ..
HMC288MS8 , 2 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz
HMC288MS8E , 2 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz
HMC291 , 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz
HMC291E , 4 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz
HMC292LC3B , GaAs MMIC FUNDAMENTAL MIXER, 16 - 30 GHz
HMC320MS8GE , GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz
HGTG30N60B3D
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG30N60B3D, HGT4E30N60B3DS
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast DiodeThe HGTG30N60B3D, and HGT4E30N60B3DS are MOS
gated high voltage switching devices combining the best
featuresof MOSFETs and bipolar transistors. These devices
have the high input impedanceofa MOSFET and the low
on-state conduction lossofa bipolar transistor. The much
lower on-state voltage drop varies only moderately betweenoC and 150oC. The IGBT usedis the development type
TA49170. The diode usedin anti-parallel withthe IGBTisthe
development type TA49053.
The IGBTis idealfor many high voltage switching
applications operatingat moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and driversfor solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Features 60A, 600V,TC =25oC 600V Switching SOA Capability Typical Fall Time..... ...... ...... 90ns atTJ =150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
TO-268AA
Symbol
Ordering InformationNOTE: When ordering, usethe entire part number.
FAIRCHILD CORPORATION IGBT PRODUCTIS COVEREDBY ONEOR MOREOF THE FOLLOWING U.S. PATENTS4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
