HGTG20N60A4D ,600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodeapplications operating at high frequencies where low JEDEC STYLE TO-247conduction losses are essent ..
HGTG20N60B3 ,40A/ 600V/ UFS Series N-Channel IGBTs
HGTG20N60B3 ,40A/ 600V/ UFS Series N-Channel IGBTs
HGTG20N60B3 ,40A/ 600V/ UFS Series N-Channel IGBTs
HGTG20N60C3 ,45A, 600V, UFS Series N-Channel IGBTapplications operating at moderate frequencies where low - TB334 “Guidelines for Soldering Surface ..
HGTG20N60C3D ,45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodeapplications operating at moderate frequencies where low conduction losses are essential, such as: ..
HMC276QS24 , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HMC276QS24 , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HMC276QS24 , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
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HGTG20N60A4D
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60A4D, HGT4E20N60A4DS
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast DiodeThis family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25o C and 150o C. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
These IGBT’s are ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. These devices have been
optimized for high frequency switch mode power
supplies.Formerly Developmental T ype TA49341.
Symbol
Features >100kHz Operation At 390V, 20A 200kHz Operation At 390V, 12A 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125oC Low Conduction Loss T emperature Compensating SABER™ Model
Packaging
JEDEC STYLE TO-247
TO-268AA
Ordering InformationNOTE: When ordering, use the entire part number.
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
