HGT1S7N60C3DS ,14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodesapplications operating at moderate frequencies where low conduction losses are essential, such as: ..
HGTG10N120BND ,35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diodefeatures of MOSFETs and bipolar transistors. This device • Short Circuit Ratinghas the high input i ..
HGTG10N120BND ,35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFeatureswith Anti-Parallel Hyperfast Diodeo• 35A, 1200V, T = 25 CCThe HGTG10N120BND is a Non-Punch ..
HGTG11N120CN ,43A/ 1200V/ NPT Series N-Channel IGBTFeaturesoThe HGTG11N120CN, HGTP11N120CN, and• 43A, 1200V, T = 25 CCHGT1S11N120CNS are Non-Punch Thr ..
HGTG11N120CND ,43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFeatureswith Anti-Parallel Hyperfast Diodeo• 43A, 1200V, T = 25 CCThe HGTG11N120CND is a Non-Punch ..
HGTG12N60A4 ,600V, SMPS Series N-Channel IGBTsFeaturesThe HGTP12N60A4, HGTG12N60A4 and• >100kHz Operation at 390V, 12AHGT1S12N60A4S are MOS gated ..
HMC274QS16 , 1 dB LSB GaAs IC 5-BIT DIGITAL ATTENUATOR, 0.7 - 2.7 GHz
HMC276QS24 , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HMC276QS24 , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HMC276QS24 , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HMC276QS24E , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HMC277MS8E , GaAs MMIC SMT SINGLE BALANCED MIXER, 0.7 - 1.2 GHz
HGT1S7N60C3DS
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D, HGT1S7N60C3DS
14A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast DiodesThe HGTP7N60C3D and HGT1S7N60C3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25o C and
150o C. The IGBT used is developmental type TA49115. The
diode used in anti-parallel with the IGBT is developmental
type TA49057.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49121.
Symbol
Features 14A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering InformationNOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.
GATE
COLLECTOR (FLANGE)
COLLECTOR
(FLANGE)GATE
EMITTER
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
