HGT1S7N60C3D ,14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodesfeatures of MOSFETs and bipolar transistors. These(FLANGE)devices have the high input impedance of ..
HGT1S7N60C3DS ,14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodesapplications operating at moderate frequencies where low conduction losses are essential, such as: ..
HGTG10N120BND ,35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diodefeatures of MOSFETs and bipolar transistors. This device • Short Circuit Ratinghas the high input i ..
HGTG10N120BND ,35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFeatureswith Anti-Parallel Hyperfast Diodeo• 35A, 1200V, T = 25 CCThe HGTG10N120BND is a Non-Punch ..
HGTG11N120CN ,43A/ 1200V/ NPT Series N-Channel IGBTFeaturesoThe HGTG11N120CN, HGTP11N120CN, and• 43A, 1200V, T = 25 CCHGT1S11N120CNS are Non-Punch Thr ..
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HGT1S7N60C3D
14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
A HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCT OR HGT1S7N60C3DS 14A, 600V, UFS Series N-Channel IGBT January 1997 with Anti-Parallel Hyperfast Diodes Features Packaging JEDEC TO-220AB o • 14A, 600V at T = 25 C C EMITTER COLLECTOR • 600V Switching SOA Capability GATE o = 150 C • Typical Fall Time . . . . . . . . . . . . . . 140ns at T J • Short Circuit Rating COLLECTOR (FLANGE) • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description JEDEC TO-262AA The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS EMITTER COLLECTOR are MOS gated high voltage switching devices combining the GATE COLLECTOR best features of MOSFETs and bipolar transistors. These (FLANGE) devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between o o 25 C and 150 C. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is devel- JEDEC TO-263AB opmental type TA49057. MA The IGBT is ideal for many high voltage switching applications COLLECTOR operating at moderate frequencies where low conduction losses (FLANGE) GATE are essential, such as: AC and DC motor controls, power sup- EMITTER plies and drivers for solenoids, relays and contactors PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND Terminal Diagram HGTP7N60C3D TO-220AB G7N60C3D N-CHANNEL ENHANCEMENT MODE C HGT1S7N60C3D TO-262AA G7N60C3D HGT1S7N60C3DS TO-263AB G7N60C3D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. G Formerly Developmental Type TA49121. E o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS UNITS Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV 600 V CES Collector Current Continuous o At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 14 A C C25 o At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 7A C C110 o Average Diode Forward Current at 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 8A (AVG) Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 56 A CM Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V ±20 V GES Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V ±30 V GEM o Switching Safe Operating Area at T = 150 C, Figure 14 . . . . . . . . . . . . . . . . . . . SSOA 40A at 480V J o Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 60 W C D o o Power Dissipation Derating T > 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.487 W/ C C o Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T , T -40 to 150 C J STG o Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 260 C L Short Circuit Withstand Time (Note 2) at V = 15V . . . . . . . . . . . . . . . . . . . . . . . . . .t 1 μs GE SC Short Circuit Withstand Time (Note 2) at V = 10V . . . . . . . . . . . . . . . . . . . . . . . . . .t 8 μs GE SC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. o 2. V = 360V, T = 125 C, R = 50Ω. CE(PK) J GE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. File Number 4150.1 Copyright © Harris Corporation 1997 3-22 A
