HGT1S20N60C3R ,40A/ 600V/ Rugged UFS Series N-Channel IGBTsFeatures Descriptiono• 40A, 600V T = 25 C This family of IGBTs was designed for optimum performance ..
HGT1S2N120CN ,13A, 1200V, NPT Series N-Channel IGBTFeatures13A, 1200V, NPT Series N-Channel IGBToThe HGTD2N120CNS, HGTP2N120CN, and • 13A, 1200V, T = ..
HGT1S3N60C3DS ,6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodesfeatures of MOSFETs and bipolar transistors. These devicesJhave the high input impedance of a MOSFE ..
HGT1S7N60A4DS ,600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodeapplications operating at high frequencies where low Econduction losses are essential. This device ..
HGT1S7N60B3S ,14A, 600V, UFS Series N-Channel IGBTsfeatures of MOSFETs and bipolar transistors. Theseo = 150 Cdevices have the high input impedance of ..
HGT1S7N60C3D ,14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodesfeatures of MOSFETs and bipolar transistors. These(FLANGE)devices have the high input impedance of ..
HMC264LM3 , GaAs MMIC SUB-HARMONIC SMT MIXER, 20 - 30 GHz
HMC274QS16 , 1 dB LSB GaAs IC 5-BIT DIGITAL ATTENUATOR, 0.7 - 2.7 GHz
HMC276QS24 , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HMC276QS24 , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HMC276QS24 , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HMC276QS24E , GaAs MMIC 4x2 SWITCH MATRIX, 0.7 - 3.0 GHz
HGT1S20N60C3R
40A/ 600V/ Rugged UFS Series N-Channel IGBTs
A HGTG20N60C3R, HGTP20N60C3R, SEMICONDUCT OR HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description o • 40A, 600V T = 25 C This family of IGBTs was designed for optimum performance J in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These devices o demonstrate RUGGED performance capability when = 150 C . . . . . . . . . . . . . 330ns • Typical Fall Time at T J subjected to harsh SHORT CIRCUIT WITHSTAND TIME o = 150 C . . . . . . . . . . . . . 10μs • Short Circuit Rating at T J (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have • Low Conduction Loss been kept at a low level. The electrical specifications include typical Turn-On and Ordering Information Turn-Off dv/dt ratings. These ratings and the Turn-On ratings include the effect of the diode in the test circuit (Figure 16). PART NUMBER PACKAGE BRAND The data was obtained with the diode at the same T as the J IGBT under test. HGTP20N60C3R TO-220AB 20N60C3R Formerly Developmental Type TA49047. HGTG20N60C3R TO-247 20N60C3R Terminal Diagram HGT1S20N60C3R TO-262AA 20N60C3R N-CHANNEL ENHANCEMENT MODE HGT1S20N60C3RS TO-263AB 20N60C3R C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., G HGT1S20N60C3RS9A. E Packaging JEDEC STYLE TO-247 JEDEC TO-220AB (ALTERNATE VERSION) E E C C G G COLLECTOR COLLECTOR (FLANGE) (FLANGE) JEDEC TO-263AB JEDEC TO-262AA E COLLECTOR C MA G (FLANGE) G E COLLECTOR (FLANGE) HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. File Number 4226.1 Copyright © Harris Corporation 1997 5-3
