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HFA30PB120
1200V 30A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
International
Tait, Rectifier
Preliminary Data Sheet PD-2.604 rev.A 12/00
HFA30PB120
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
. Ultrafast Recovery
. Ultrasoft Recovery .
. Very Low IRRM
. Very Low G,
. Specired at Operating Conditions 2
Benefits
. Reduced RFI and EMI 1 3
CATHODE
. Reduced Power Loss in Diode and Switching 2
CATHODE
VR = 1200V
VF(typ.)* = 2.4V
|F(AV) = 30A
er (typ.)= 490nC
IRRM(typ.) = 8.1A
trr(typ.) = 37ns
di(,ec)M/dt(typ.)* 130A/ps
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA3OPB120 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 30 amps continuous current, the HFA3OPB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-of" during the In portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA30PB120 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings
TO-247AC(Modified)
Parameter Max. Units
VR Cathode-to/node Voltage 1200 V
IF @ Tc = 100°C Continuous Forward Current 30
IFSM Single Pulse Forward Current 120 A
IFRM Maximum Repetitive Forward Current 90
PD @ Tc = 25°C Maximum Power Dissipation W
Pro @ Tc = 100°C Maximum Power Dissipation
TJ Operating Junction and -55 to +150 "C
TSTG Storage Temperature Range
* 125°C
HFA30PB120
Preliminary Data Sheet PD-2.604 rev.A 12/00
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 1200 - - V IR = 100pA
- 2.5 3.0 IF = 16A
VFM Max Forward Voltage _ 3.2 3.93 V k: = 32A See Fig. 1
- 2.3 2.7 IF =16A,TJ =125°C
- = See Fi . 2
IRM Max Reverse Leakage Current 0.75 20 pA VR VR Rated 19
- 375 2000 T, = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 27 40 pF VR = 200V See Fig. 3
Ls Series In ductance - 8.0 - nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time - 30 - IF = 1.0A, dir/dt = 200A/ps, VR = 30V
tm See Fig. 5, 10 - 90 135 ns T: = 25''C
trr2 - 164 245 TJ =125°C IF = 16A
|RRM1 Peak Recovery Current - 5.8 10 A To = 25''C
IRRMZ See Fig. 6 - 8.3 15 TJ =125°C VR = 200V
Qm Reverse Recovery Charge - 260 675 nC T: = 25''C
Qrr2 See Fig. 7 - 680 1838 TJ = 125°C dk/dt = 200A/ps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current - 120 - Al s T: = 25°C
di(,ec)M/dt2 During ti, See Fig. 8 - 76 - p TJ =125°C
Thermal - Mechanical Characteristics
Parameter Min Typ. Max. Units
Tlead® Lead Temperature - - 300 "C
ReJc Thermal Resistance, Junction to Case - - 0.83
RNA® Thermal Resistance, Junction to Ambient - - 80 WW
Recs® Thermal Resistance, Case to Heat Sink - 0.50 -
Wt Weight - 2.0 g
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 Ibf-in
co L=100pH, duty cycle limited by max TJ
© 0063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
2
