HFA30PA60C ,600V 30A HEXFRED Common Cathode Diode in a TO-247AC packageFeatures2• Ultrafast RecoveryV (typ.)* = 1.2VF• Ultrasoft RecoveryI = 15AF(AV)• Very Low IRRMQ (typ ..
HFA30PB120 ,1200V 30A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures BASEV = 1200VRCATHODE• Ultrafast RecoveryV (typ.)* = 2.4VF• Ultrasoft Recovery 4I = 30AF(A ..
HFA30TA60C ,600V 30A HEXFRED Common Cathode Diode in a TO-220AB packageFeatures 2 V = 600VR• Ultrafast RecoveryV (typ.)* = 1.2VF• Ultrasoft RecoveryI = 15A• Very Low I F( ..
HFA30TA60CS ,600V 30A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageFeaturesV (typ.)* = 1.2V• Ultrafast Recovery F• Ultrasoft RecoveryI = 15AF(AV)• Very Low IRRMQ (typ ..
HFA3101 ,Gilbert Cell Multiplier,Ultra High FrequencyFeaturesThe HFA3101 is an all NPN transistor array configured as a• High Gain Bandwidth Product (f ) ..
HFA3101B , Gilbert Cell UHF Transistor Array
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HM62W16255CJPI12 , Wide Temperature Range Version 4M High Speed SRAM (256-kword ´ 16-bit)
HM62W16255CTTI12 , Wide Temperature Range Version 4M High Speed SRAM (256-kword ´ 16-bit)
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HM62W16255HCLJP-10 , 4M High Speed SRAM (256-kword x 16-bit)
HFA30PA60C
600V 30A HEXFRED Common Cathode Diode in a TO-247AC package
Bulletin PD -2.336
International
TOR, Rectifier
rev. C 05/01
HFA30PA60C
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features 2
. Ultrafast Recovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low Qn
. Specified at Operating Conditions
Benefits
- Reduced RFI and EMI 1 3
. Reduced Power Loss in Diode and Switching
VR = 600V
VF(typ.)* = 1.2V
|F(AV) = 15A
er (typ.)= 80nC
IRRM (typ.) = 4.0A
trr(typ.) = 19nS
di(,ec)M/dt (typ.)* = 160A/ps
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA30PA60C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available. TO-247AC
With basic ratings of 600 volts and 15 amps per Leg continuous current, the
HFA30PA60C is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tr, portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA30PA60C is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings (per Leg)
Parameter Max. Units
VR Cathode-to-Ano) Voltage 600 V
Ir @ Tc = 100°C Continuous Forward Current 15
IFSM Single Pulse Forward Current 150 A
IFRM Maximum Repetitive Forward Current 60
Pro @ Tc = 25°C Maximum Power Dissipation 74 W
PD @ Tc = 100°C Maximum Power Dissipation 29
T, Operating Junction and -55 to +150 C
TSTG Storage Temperature Range
* 125°C
wwwjfcom
HFA30PA60C
Bulletin PD -2.336 rev.C 05/01
International
TOR Rectifier
Electrical Characteristics (per Leg) @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 - - V IR = 100pA
- 1.3 1.7 IF = 15A
VFM Max Forward Voltage - 1.5 2.0 V IF = 30A See Fig. 1
- 1.2 1.6 IF = 15A, T: = 125°C
- = See Fi . 2
IRM Max Reverse Leakage Current 1.0 10 pA VR VR Rated 19
- 400 1000 T, = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 25 50 pF VR = 200V See Fig. 3
Ls Series In ductance - 12 - nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics (per Leg)@ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time _- 19 - IF = 1.0A, dif/dt = 200A/ps, VR = 30V
trr1 See Fig. 5, 10 - 42 60 ns T: = 25°C
trr2 - 70 120 TJ = 125°C IF = 15A
IRRW Peak Recovery Current - 4.0 6.0 A T: = 25°C
IRRMZ See Fig. 6 - 6.5 10 TJ = 125°C VR = 200V
Qm Reverse Recovery Charge - 80 180 n C T J = 25°C
an See Fig. 7 - 220 600 TJ = 125°C diddt = 200A/ps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current - 250 - Alps T: = 25°C
digecw/dtz During tr, See Fig. 8 - 160 - TJ = 125°C
Thermal - Mechanical Characteristics (per Leg)
Parameter Min Typ. Max. Units
Tlead® Lead Temperature - - 300 "C
Rch Junction-to-Case, Single Leg Conducting - - 1.7
Junction-to-Case, Both Legs Conducting - - 0.85 K/W
Rthua© Thermal Resistance, Junction to Ambient - - 4O
Rmcs© Thermal Resistance, Case to Heat Sink - 0.25 -
Wt Weight - 6.0 - g
- 0.21 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 Ibf-in
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
