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HFA25TB60S
600V 25A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
Bulletin PD-20616 rev.B 11/03
International
lean Rectifier HFA25TB60S
HEXFRED" Ultrafast, Soft Recovery Diode
Features Base VR = 600V
. Ultrafast Recovery cam“: VF(typ.)* = 1.3V
. Ultrasoft Recovery -
. Very Low IRRM |F(AV) - 25A
. Very Low On On (typ.)= 112nC
. Specified at Operating Conditions l IRRM = 10A
Benefits
t t . = 23ns
. Reduced RFI and EMI NIC 1 §ngde . rr( yp.)
. Reduced Power Loss in Diode and Switching d|(rec)M/dt (typ.) = 250A/ps
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier‘s HFA25TB60S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60S
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the lb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA25TB60S is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max. Units
VR Cathode-to-Anode Voltage 600 V
IF @ To = 100°C Continuous Forward Current 25
IFSM Single Pulse Forward Current 225 A
IFRM Maximum Repetitive Forward Current 100
PD @ Tc = 25°C Maximum Power Dissipation 125 W
PD @ Tc = 100°C Maximum Power Dissipation 50
To Operating Junction and o
TSTG Storage Temperature Range -55 to +150 C
* 125°C
HFA25TB60S
Bulletin PD-20616 rev.B 11/03
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 - - V IR = 100PA
- 1.3 1.7 IF = 25A
VFM Max Forward Voltage _ 1.5 2.0 V IF = 50A See Fig. 1
- 1.3 1.7 IF = 25A, To = 125°C
IRM Max Reverse Leakage Current -- 1.5 20 pA VR = VR Rated See Fig. 2
- 600 2000 To = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 55 100 pF VR = 200V See Fig. 3
Ls Series In ductance - 8.0 - nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time - 23 - IF = 1.0A, dir/dt = 200Alps, VR = 30V
trr1 See Fig. 5 - 50 75 ns To = 25°C
trr2 - 105 160 TJ = 125°C IF = 25A
|RRM1 Peak Recovery Current - 4.5 10 A To = 25°C
IRRMZ See Fig. 6 - 8.0 15 To-- 125°C VR = 200V
er1 Reverse Recovery Charge - 112 375 n C T J = 25°C
an See Fig. 7 - 420 1200 To = 125°C diddt = 200AIps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current - 250 - Alps TJ = 25°C
di(,ec)M/dt2 During tr, See Fig. 8 - 160 - To = 125°C
Thermal - Mechanical Characteristics
Parameter Min. Typ. Max. Units
Tgead co Lead Temperature - - 300 "C
Rm Thermal Resistance, Junction to Case - - 1.0 KAN
RNA © Thermal Resistance, Junction to Ambient - - 80
Wt Weight - 2.0 - g
- 0.07 - (oz)
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
