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HFA25TB60
600V 25A HEXFRED Discrete Diode in a TO-220AC package
International
TOR Rectifier
Bulletin PD-2.339 rev.A 11/00
HFA25TI360
HEXFREDTM
Ultrafast, Soft Recovery Diode
CATHODE
Features
. Ultrafast Recovery .
. Ultrasoft Recovery
. Very Low IRRM
. Very Low Qrr 2
. Specfed at Operating Conditions
Benefits
. Reduced RFI and EMI
CATHODE
VR = 600V
VF(typ.)* = 1.3V
|F(AV) = 25A
er (typ.)= 112nC
IRRM = 10A
trr(typ.) = 23ns
di(rec)M/dt (typ.) = 250NUS
. Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tr, portion ofrecovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Absolute Maximum Ratings
TO-220AC
Parameter
Max Units
VR Cathode-to-Ano" Voltage
IF @ To = 100°C Continuous Forward Current
IFSM Single Pulse Forward Current
IFRM Maximum Repetitive Forward Current
PD @ Tc = 25°C Maximum Power Dissipation
Pro @ Tc = 100°C Maximum Power Dissipation
TJ Operating Junction and
Storage Temperature Range
-55 to +150 W
* 125°C
HFA25TB60
Bulletin PD-2.339 rev.A 11/00
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 V IR = 100pA
1.3 1.7 IF = 25A
VFM Max Forward Voltage 1.5 2.0 V IF = 50A See Fig. 1
1.3 1.7 |F=25A,TJ= 125°C
IRM Max Reverse Leakage Current 1.5 20 pA VR = VRoRated See Fig. 2
600 2000 T, = 125 C, VR = 0.8 x VR Rated
CT Junction Capacitance 55 100 pF VR = 200V See Fig. 3
. Measured lead to lead 5mm from
Ls Series Inductance 8.0 nH package body
Dynamic Recovery Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 23 IF = 1.0A, dir/dt = 200A/ps, VR = 30V
tm See Fig. 5, e & 16 50 75 ns T, = 25°C
ha 105 160 T: = 125°C IF = 25A
IRRW Peak Recovery Current 4.5 10 A To = 25°C
lam See Fig. 7& 8 8.0 15 T: = 125°C VR = 200V
er1 Reverse Recovery Charge 112 375 TJ = 25°C
. nC _
an See Fig. 9 & 10 420 1200 T: = 125''C dir/dt = 200A/ps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 250 A / s TJ = 25°C
di(,ec)M/dt2 Duringtr, See Fig. 11 & 12 160 p T: = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
T1ead® Lead Temperature 300 °C
Rthuc Thermal Resistance, Junction to Case 1.0
RthJA© Thermal Resistance, Junction to Ambient 80 KAN
Rmcs© Thermal Resistance, Case to Heat Sink 0.5
Wt Weight 2.0 g
0.07 (oz)
Mounting Torque 6.0 12 Kg-cm
5.0 10 Ibf-in
OD 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
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