HFA16TA60CSTRR ,600V 16A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageapplications where high speed, high efficiency is needed.Absolute Maximum Ratings (per Leg) ..
HFA16TB120 ,1200V 16A HEXFRED Discrete Diode in a TO-220AC packageapplications where highspeed, high efficiency is needed.Absolute Maximum Ratings Param ..
HFA16TB120 ,1200V 16A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 2.3VF• Ultrafast Recovery 4• Ultrasoft Recovery I = 16AF(AV)• Very Low IRRMQ (t ..
HFA16TB120S ,1200V 16A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeaturesV (typ.)* = 2.3VF• Ultrafast Recovery 4• Ultrasoft Recovery I = 16AF(AV)• Very Low IRRMQ (t ..
HFA200MD40C ,400V 200A HEXFRED Common Cathode Diode in a TO-244AB Isolated packageapplications whereswitching losses are significant portion of the total losses.TO-244AB(ISOLATED)Ab ..
HFA240NJ40C ,400V 240A HEXFRED Common Cathode Diode in a TO-244AB Non-Isolated packageapplications whereswitching losses are significant portion of the total losses.TO-244ABAbsolute Max ..
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7SL , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HFA16TA60CS-HFA16TA60CSTRR
600V 16A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) package
Bulletin PD-20373 01/01
International
TOR Rectifier HFA16TA60CS
HEXFREDT" Ultrafast, Soft Recovery Diode
Features 2 VR = 600V
. Ultrafast Recovery
. Ultrasoft Recovery VF = 1.7V
. Very Low IRRM
. Very Low G, A = 65nC
. Specified at Operating Conditions 21s Gr
Benefits .
d /dt* =240A/ s
. Reduced RFI and EMI 1 3 I(rec)M * o p
. Reduced Power Loss in Diode and Switching 125 C
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA16TA60CS is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics szak
which result in performance which is unsurpassed by any rectifier previously
available. With basic ratings of 600 volts and 8 amps per Leg continuous
current, the HFA16TA60CS is especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to "snap-off" during the to portion of
recovery. The HEXFRED features combine to offer designers a rectifier with
lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly
reduce snubbing, component count and heatsink sizes. The HEXFRED
HFA16TA60CS is ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings (per Leg)
Parameter Max Units
VR Cathode-to-Anode Voltage 600 V
IF @ Tc = 100°C Continuous Forward Current 8.0
IFSM Single Pulse Forward Current 60 A
IFRM Maximum Repetitive Forward Current 24
Pro @ To = 25°C Maximum Power Dissipation 36 W
PD @ Tc = 100°C Maximum Power Dissipation 14
Tu Operating Junction and - 55 to +150 "C
TSTG Storage Temperature Range
HFA16TA60CS International
Bulletin PD-20373 01/01 IEER Rectifier
Electrical Characteristics (per Leg) @ To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 V IR = 100pA
1.4 1.7 IF = 8A See Fig. 1
VFM Max Forward Voltage 1.7 2.1 V IF = 16A
1.4 1.7 IF = 8A, T: = 125°C
IRM Max Reverse Leakage Current 0.3 5 pA VR = VR Rated See Fig. 2
100 500 T, = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance 10 25 pF VR = 200V See Fig. 3
Ls Series In ductance 8.0 nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics (per Leg) @ Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 18 IF = 1.0A, dir/dt = 200Alps, VR = 30V
trr1 See Fig. 5, 6 & 16 37 55 ns T: = 25°C
trr2 55 90 TJ = 125°C IF = 8A
IRRM1 Peak Recovery Current 3.5 5.0 A T, = 25°C
IRRMZ See Fig. 7& 8 4.5 8.0 TJ =125°c I/e = 200V
Qm Reverse Recovery Charge 65 138 nC To = 25''C
an See Fig. 9 & 10 124 360 Tu = 125°C dif/dt = 200AIps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 240 Alps T J = 25''C
di(rec)M/d12 Duringtb See Fig. 11 & 12 210 Tu=125''C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
TleadCD Lead Temperature 300 (
RthJc Junction-to-Case, Single Leg Conducting 3.5
Junction-to-Case, Both Legs Conducting 1.75 KAN
RthoAC2) Thermal Resistance, Junction to Ambient 80
Wt Weight 2 g
0.07 (oz)
Mounting Torque 6 12 Kg-cm
5 10 Ibf-in
C) 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
2