HFA16TA60C ,600V 16A HEXFRED Common Cathode Diode in a TO-220AB packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV (typ.)* = 1.7VF• Very Low IRRMQ *= 65nCr ..
HFA16TA60CPBF , HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
HFA16TA60CS ,600V 16A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.7VF• Very Low IRRM• Very Low QrrQ * ..
HFA16TA60CSTRR ,600V 16A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageapplications where high speed, high efficiency is needed.Absolute Maximum Ratings (per Leg) ..
HFA16TB120 ,1200V 16A HEXFRED Discrete Diode in a TO-220AC packageapplications where highspeed, high efficiency is needed.Absolute Maximum Ratings Param ..
HFA16TB120 ,1200V 16A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 2.3VF• Ultrafast Recovery 4• Ultrasoft Recovery I = 16AF(AV)• Very Low IRRMQ (t ..
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7SL , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HFA16TA60C
600V 16A HEXFRED Common Cathode Diode in a TO-220AB package
International
Bulletin PD-2.342 rev.A 11/00
TOR Rectifier HFA16TA60C
HEXFRED'M Ultrafast, Soft Recovery Diode
Featu res
. Ultrafast Recovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low er
. SpeaTed at Operating Conditions
Benefits
. Reduced RFI and EMI 1
VR = 600V
VF(typ.)* = 1.7V
G, *= 65nC
rec)M/dt * = 240Alps
* 125°C
. Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier‘s HFA16TA60C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics
which result in performance which is unsurpassed by any rectifier previously
available. With basic ratings of 600 volts and 15 amps per Leg continuous
current, the HFA16TA60C is especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of
recovery. The HEXFRED features combine to offer designers a rectifier with
lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly
reduce snubbing, component count and heatsink sizes. The HEXFRED
HFA16TA60C is ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings (per Leg)
TO-220AB
Parameter
VR Cathode-to/node Voltage
IF @ Tc = 100°C Continuous Forward Current
IFSM Single Pulse Forward Current
IFRM Maximum Repetitive Forward Current
PD @ To = 25°C Maximum Power Dissipation
PD @ Tc = 100''C Maximum Power Dissipation
T, Operating Junction and
TSTG Storage Temperature Range
-55 to +150
HFA16TA60C International
Bulletin PD-2.342 rev.A 11/00 IEZR Rectifier
Electrical Characteristics (per Leg) ti) Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 V IR = 100pA
1.4 1.7 IF = 8A
VFM Max Forward Voltage 1.7 2.1 V IF = 16A See Fig. 1
1.4 1.7 IF = 8A, T: = 125°C
IRM Max Reverse Leakage Current 0.3 5 pA VR = VR Rated See Fig. 2
100 500 T, = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance 10 25 pF VR = 200V See Fig. 3
Ls Series In ductance 8.0 nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics (per Leg) @ Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 18 IF = 1.0A, dif/dt = 200Alps, VR = 30V
tm See Fig. 5, 10 37 55 ns T: = 25''C
trr2 55 90 TJ =125°C IF = 8A
IRRM1 Peak Recovery Current 3.5 5.0 A T: = 25''C
IRRM2 See Fig. 6 4.5 8 TJ = 125°C VR = 200V
Qm Reverse Recovery Charge 65 138 nC T: = 25°C
er2 See Fig. 7 124 360 TJ =125°c diddt = 200Alps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 240 Alps T: = 25°C
di(rec)M/dt2 During tb See Fig. 8 210 TJ = 125''C
Thermal - Mechanical Characteristics (per Leg)
Parameter Min Typ Max Units
Tlead® Lead Temperature 300 "C
Rthoc Junction-to-Case, Single Leg Conducting 3.5
Junction-to-Case, Both Legs Conducting 1.75 K/W
RthJA® Thermal Resistance, Junction to Ambient 80
Rthcs® Thermal Resistance, Case to Heat Sink 0.5
. 2.0 g
Wt W ht
elg 0.07 (oz)
Mounting Torque 6.0 12 Kg-qn
5.0 10 Ibrin
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
2
