HFA16PB120 ,1200V 16A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures CATHODE• Ultrafast Recovery V (typ.)* = 2.3VF4• Ultrasoft RecoveryI = 16AF(AV)• Very Low I ..
HFA16TA60C ,600V 16A HEXFRED Common Cathode Diode in a TO-220AB packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV (typ.)* = 1.7VF• Very Low IRRMQ *= 65nCr ..
HFA16TA60CPBF , HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
HFA16TA60CS ,600V 16A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.7VF• Very Low IRRM• Very Low QrrQ * ..
HFA16TA60CSTRR ,600V 16A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageapplications where high speed, high efficiency is needed.Absolute Maximum Ratings (per Leg) ..
HFA16TB120 ,1200V 16A HEXFRED Discrete Diode in a TO-220AC packageapplications where highspeed, high efficiency is needed.Absolute Maximum Ratings Param ..
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HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HFA16PB120
1200V 16A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
International
TOR Rectifier
Bulletin PD-2.364 rev.B 11/00
HFA16PB120
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features cJ,,rz,,
. Ultrafast Recovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low Qrr
. Specired at Operating Conditions
Benefits
. Reduced RFI and EMI W3»; MO;
. Reduced Power Loss in Diode and Switching
VR = 1200V
VF(typ.)* = 2.3V
IF(AV) = 16A
er (typ.)= 260nC
IRRM(typ.) = 5.8A
trr(typ.) = 30ns
di(rec)M/dt (typ.)* = 76A/ps
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifer's HFA16PB120 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the h, portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings
TO-247AC(Modified)
Parameter Max Units
VR Cathode-to-Mode Voltage 1200 V
I; @ TC = 25°C Continuous Forward Current
IF @ Tc = 100°C Continuous Forward Current 16 A
IFSM Single Pulse Forward Current 190
IFRM Maximum Repetitive Forward Current 64
P0 @ To = 25°C Maximum Power Dissipation 151 W
Pro @ Tc = 100''C Maximum Power Dissipation 60
To Operating Junction and
TSTG Storage Temperature Range -55 to +150 CC
* 125°C
HFA16PB120
Bulletin PD-2.364 rev.A 11/00
International
IDR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 1200 V IR = 100pA
2.5 3.0 IF = 16A
VFM Max Forward Voltage 3.2 3.93 v k: = 32A See Fig. 1
2.3 2.7 IF =16A,TJ = 125°C
IRM Max Reverse Leakage Current 0.75 20 pA VR = VR Rated See Fig. 2
375 2000 T, = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance 27 40 pF VR = 200V See Fig. 3
Ls Series In ductance 8.0 nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 30 IF = 1.0A, dir/dt = 200A/ps, VR = 30V
tm See Fig. 5, 10 90 135 ns T: = 25''C
trr2 164 245 TJ = 125°C IF = 16A
|RRM1 Peak Recovery Current 5.8 10 A To = 25''C
IRRMZ See Fig. 6 8.3 15 TJ =125°C VR = 200V
Qm Reverse Recovery Charge 260 675 nC T: = 25''C
Qrr2 See Fig. 7 680 1838 TJ = 125°C dk/dt = 200A/ps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 120 A /ps T: = 25°C
di(,ec)M/dt2 During ti, See Fig. 8 76 TJ = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tead0) Lead Temperature 300 (
Rthuc Thermal Resistance, Junction to Case 0.83
RmJA® Thermal Resistance, Junction to Ambient 80 KAN
Rthcs© Thermal Resistance, Case to Heat Sink 0.50
Wt Weight 2.0 g
0.07 (oz)
Mounting Torque 6.0 12 Kg-cm
5.0 10 Ibf-in
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
