HFA16PA60C ,600V 16A HEXFRED Common Cathode Diode in a TO-247AC packageFeaturesV = 600VR2• Ultrafast Recovery• Ultrasoft RecoveryV = 1.7VF• Very Low IRRM• Very Low QrrQ * ..
HFA16PA60CPBF , HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
HFA16PB120 ,1200V 16A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures CATHODE• Ultrafast Recovery V (typ.)* = 2.3VF4• Ultrasoft RecoveryI = 16AF(AV)• Very Low I ..
HFA16TA60C ,600V 16A HEXFRED Common Cathode Diode in a TO-220AB packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV (typ.)* = 1.7VF• Very Low IRRMQ *= 65nCr ..
HFA16TA60CPBF , HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
HFA16TA60CS ,600V 16A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.7VF• Very Low IRRM• Very Low QrrQ * ..
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7SL , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HFA16PA60C
600V 16A HEXFRED Common Cathode Diode in a TO-247AC package
International
Bulletin PD-2.606 rev.B 05/01
Tart, Rectifier HFA16PA60C
HEXFREDT" Ultrafast, Soft Recovery Diode
Features 2 VR = 600V
. Ultrafast Recovery
. Ultrasoft Recovery VF = 1.7V
. Very Low IRRM
. Very Low Qrr * =
. Specified at Operating Conditions E Gr 65nC
Benefits . * -
. Reduced RFI and EMI 1 _ 3 dlaecW/(it :240A/“s
. Reduced Power Loss in Diode and Switching 125 C
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA16PA60C is a state of the art center tap ultra fast
recovery. diode. 'Empleying the latest in epita.xi.al eonstruction anq edvanced TO-247AC
processmg techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA16PA600 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-oft" during the tr, portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16PA60C is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings (per Leg)
Parameter Max Units
VR Cathode-to-Anode Voltage 600 V
IF @ Tc = 100°C Continuous Forward Current (per Leg) 8
IFSM Single Pulse Forward Current 60 A
IFRM Maximum Repetitive Forward Current 24
Po @ Tc = 25°C Maximum Power Dissipation 36 W
Pro @ To = 100°C Maximum Power Dissipation 14
Tu Operating Junction and -55 to +150 "C
TSTG Storage Temperature Range
1
HFA16PA60C
Bulletin PD-2.606 rev.B 05/01
International
TOR Rectifier
Electrical Characteristics (per Leg) @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 V IR = 100pA
1.4 1.7 IF = 8A
VFM Max Forward Voltage 1.7 2.1 V IF = 16A See Fig. 1
1.4 1.7 IF = 8A, T: = 125°C
IRM Max Reverse Leakage Current 0.3 5 pA VR = VR Rated See Fig. 2
100 500 To = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance 1O 25 pF VR = 200V See Fig. 3
Meas red lead to lead 5mm from
Ls Series Inductance 8.0 nH U
package body
Dynamic Recovery Characteristics (per Leg) @ Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 18 IF = COA, dif/dt = 200Alps, VR = 30V
tm See Fig. 5, 6 & 16 37 55 ns T: = 25°C
trr2 55 90 T: = 125°C IF = 8A
IRRM1 Peak Recovery Current 3.5 5.0 A TJ = 25''C
IRRMZ See Fig. 7& 8 4.5 8.0 T: = 125°C Ve = 200V
Qm Reverse Recovery Charge 65 138 TJ = 25°C
. nC .
an See Fig. 9 & 10 124 360 T: = 125°C dk/dt = 200/Vps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 240 Alps TJ = 25°C
di(,ec)Mld12 During h, See Fig. 11 & 12 210 T: = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tead0) Lead Temperature 300 "C
RthJc Junction-to-Case, Single Leg Conducting 3.5
Junction-to-Case, Both Legs Conducting 1.75 K/W
RthJA® Thermal Resistance, Junction to Ambient 4O
RthCS® Thermal Resistance, Case to Heat Sink 0.25
Wt Wei ht
g 0.21 (oz)
Mounting Torque 6 12 Kg-cm
5 10 Ibf-in
C) 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
2
