HFA15TB60S ,600V 15A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeaturesBaseV = 600VR• Ultrafast RecoveryCathode2• Ultrasoft RecoveryV = 1.7VF• Very Low IRRM• Ve ..
HFA16PA60C ,600V 16A HEXFRED Common Cathode Diode in a TO-247AC packageFeaturesV = 600VR2• Ultrafast Recovery• Ultrasoft RecoveryV = 1.7VF• Very Low IRRM• Very Low QrrQ * ..
HFA16PA60CPBF , HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
HFA16PB120 ,1200V 16A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures CATHODE• Ultrafast Recovery V (typ.)* = 2.3VF4• Ultrasoft RecoveryI = 16AF(AV)• Very Low I ..
HFA16TA60C ,600V 16A HEXFRED Common Cathode Diode in a TO-220AB packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV (typ.)* = 1.7VF• Very Low IRRMQ *= 65nCr ..
HFA16TA60CPBF , HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7SL , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HFA15TB60S
600V 15A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
Bulletin PD-20615 rev.B 11/03
International
TOR Rectifier HFA15TB60S
HEXFRED'" Ultrafast, Soft Recovery Diode
Features
. Ultrafast Recovery g/gi, VR = 600V
. Ultrasoft Recovery 2
. Very Low IRRM VF = 1.7V
. Very Low Qrr
. Specified at Operating Conditions er * = 84nC
Benefits 1 3 di(,ec)M/dt* =188/Vps
. Reduced RFI and EMI NIC Anode * 125°C
. Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA15TB60S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA15TB60S is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recoverytime, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tr, portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60S is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
VR Cathode-to-Anode Voltage
IF @ TC = 100°C Continuous Fon/vard Current
IFSM Single Pulse Forward Current
IFRM Maximum Repetitive Forward Current
PD @ Tc = 25''C Maximum Power Dissipation
PD @ To = 100°C Maximum Power Dissipation
T: Operating Junction and
TSTG Storage Temperature Range
-55 to +150 'C
HFA15TB60S
Bulletin PD-20615 rev.B 11/03
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 - - V IR = 100pA
- 1.3 1.7 IF = 15A
VFM Max Forward Voltage _ 1.5 2.0 V lr = 30A See Fig. 1
- 1.2 1.6 IF = 15A, To = 125°C
_ = See Fi .2
IRM Max Reverse Leakage Current 1.0 10 pA VR VR Rated lg
- 400 1000 To = 125''C, VR = 0.8 x VR Rated
CT Junction Capacitance - 25 50 pF VR = 200V See Fig. 3
Ls Series Inductance _ 8.0 - nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time - 23 - IF = 1.0A, diddt = 200A/ps, VR = 30V
trr1 See Fig. 5 - 50 60 ns Tu = 25°C
tn; - 105 120 TJ =125°C IF = 15A
|RRM1 Peak Recovery Current - 4.5 6.0 A Tu = 25''C
IRRMZ See Fig. 6 - 6.5 10 TJ=125°C VR = 200V
Qm Reverse Recovery Charge - 84 180 nC TJ = 25°C
Qrra See Fig. 7 - 241 600 Tu = 125°C dif/dt = 200A/ps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current - 188 - Alps TJ = 25°C
di(rec)M/dt2 During its See Fig. 8 - 160 - TJ = 125°C
Thermal - Mechanical Characteristics
Parameter Min. Typ. Max. Units
Tlead (D Lead Temperature - - 300 "C
Reuc Thermal Resistance, Junction to Case - - 1.7 K/W
RNA © Thermal Resistance, Junction to Ambient - - 80
Wt Weight - 2.0 - g
- 0.07 - (oz)
OD 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
