HFA15TB60PBF ,600V 15A UltraFast Recovery Diode packaged in TO-220AC packageapplications in power supplies and power con-version systems (such as inverters), motor drives, and ..
HFA15TB60PBF ,600V 15A UltraFast Recovery Diode packaged in TO-220AC package HFA15TB60PbF Ultrafast, Soft Recovery Diode Ultrafast Recovery V = 600V R Ultrasoft Recovery ..
HFA15TB60S ,600V 15A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeaturesBaseV = 600VR• Ultrafast RecoveryCathode2• Ultrasoft RecoveryV = 1.7VF• Very Low IRRM• Ve ..
HFA16PA60C ,600V 16A HEXFRED Common Cathode Diode in a TO-247AC packageFeaturesV = 600VR2• Ultrafast Recovery• Ultrasoft RecoveryV = 1.7VF• Very Low IRRM• Very Low QrrQ * ..
HFA16PA60CPBF , HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
HFA16PB120 ,1200V 16A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures CATHODE• Ultrafast Recovery V (typ.)* = 2.3VF4• Ultrasoft RecoveryI = 16AF(AV)• Very Low I ..
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLFP-7SL , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM62V8512BLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HFA15TB60PBF
600V 15A UltraFast Recovery Diode packaged in TO-220AC package
International
TOR. Rectifier
(aiatiar'aaiiiurl
Ultrafast, Soft Recovery Diode
Ultrafast Recovery
- Ultrasoft Recovery Ve-- 600V
- Very Low IRRM -
- Very Low Qrr Vr= 1.7V
. Specified at Operating Conditions Q *= 84nC
. Lead-Free rr
D re dt = 188A/ s
Benefits It c)M1 p
q Reduced RFI and EMI
- Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifer's HFA15TB60PbF is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 600 volts and
8 amps per Leg continuous current, the HFA15TB60PbF is especially well suited for
use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovety
time, the ultrafast recovery diode product line features extremely low values of peak
recovery current (IRRM) and does not exhibit any tendency to "snap-oft" during the tb
portion of recovery. The ultrafast recovery diode features combine to offer designers
a rectifier with lower noise and significantly lower switching losses in both the diode
and the switching transistor. These ultrafast recovery diode advantages can help to
significantly reduce snubbing, component count and heat sink sizes. The
HFA15TB60PbF is ideally suited for applications in power supplies and power con-
version systems (such as inverters), motor drives, and many other similar applica-
tions where high speed, high efficiency is needed.
* 125°C
"IS'),)::,
HFA15TB6OPbF
Standard Pack
Base part number Package Type Form Quantity Orderable Part Number
HFA15TB60PbF TO-220AC Tube 50 HFA15TB60PbF
Absolute Maximum Ratings
Parameter Max. Units
VR Cathode -to - Anode Voltage 600 V
V @ To = 100°C Continuous Forward Current 15
IFSM Single Pulse Forward Current 150 A
IFRM Maximum Repetitive Forward Current 60
PD @Tc = 25°C Maximum Power Dissipation 74
Po @Tc = 100°C Maximum Power Dissipation 29 W
T J Operating Junction and 1
- + cr
TSTG Storage Temperature Range 55 to 50 C
fl ©2015 International Rectifier
Submit Datasheet Feedback
February 17, 2015
ISER Mrail@EtaGiilldF
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
VBR Cathode Anode Breakdown Voltage 600 - - IR = 100pA
- 1.3 1.7 V IF = 15A See Fig. 1
VFM Max Forward Voltage - 1.5 2.0 IF = 30A
- 1.2 1.6 IF = 30A ,TJ = 125°C
- 1.0 10 VR = ( Rated See Fig. 2
IRM Max Reverse Leakage Current - 400 1000 PA To = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 25 50 pF VR = 200V See Fig. 3
. Measured lead to lead 5mm from
Ls Series Inductance - 8.0 - nH package body
Dynamic Recovery Characteristics © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
trr - 19 - IF = 1.0A, dif/dt = 200A/ps, VR = 30V
trr1 Reverse Recovery Time See Fig. 5 - 42 60 ns TJ = 25°C
trr2 - 74 120 To = 125°C
l . - 4.0 6.0 T = 25°C I =15A
i',C,11, Peak Recovery Current See Fig. 6 - 6.5 10 A T: = 125°C (i, =200V
QM Reverse Recovery Charge See Fig.7 - 84 180 nC T, = 25''C di/dt = 200A/ps
an - 241 600 T: = 125°C
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current - 188 - To = 25°C
di(,ec)M,dt2 During tb See Fig.8 -- 160 -- Alps T, = 125°C
Thermal -Mechanical Characteristics
Parameter Min. Typ. Max. Units
Tlead C) Lead Temperature - - 300 ''C
Rm Thermal Resistance, Junction to Case - - 1.7
ReJA © Thermal Resistance, Junction to Ambient - - 80 KNV
Recs® Thermal Resistance, Case to Heat Sink - 0.50 -
Wt Weight - 2.0 - g
- 0.07 - (oz)
. 6.0 - 12 Kg-cm
T Mounting Torque 5.0 - 10 Ibf-in
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
©2015lnternationalRectifier SubmitDatasheetFeedback February17, 2015
