HFA15TB60 ,600V 15A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.7VF• Very Low IRRM• Very Low Qrr ..
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HFA15TB60
600V 15A HEXFRED Discrete Diode in a TO-220AC package
Bulletin PD-2.334 rev.C 11/03
International
ISBR Rectifier
HFA15TB60
HFA15TB60-1
HEXFREDTM
Featu res
. Ultrafast Recovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low G,
. Specified at Operating Conditions
Benefits
. Reduced RFI and EMI
. Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA15TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA15TB60 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tr, portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA15TB60 is ideally suited
for applications in power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications where high speed,
high efficiency is needed.
Absolute Maximum Ratings
Ultrafast, Soft Recovery Diode
VR = 600V
VF = 1.7V
er * = 84nC
di(,ec)M/dt * = 188/Vps
* 125°C
Parameter Max Units
VR Cathode-to-Anode Voltage 600 V
IF @ To = 100°C Continuous Forward Current 15
IFSM Single Pulse Forward Current 150 A
IFRM Maximum Repetitive Forward Current 60
Pro @ Tc = 25°C Maximum Power Dissipation 74
PD @ Tc = 100°C Maximum Power Dissipation 29 W
T: Operating Junction and
TSTG Storage Temperature Range - 55 to +150 C
1
HFA'15TB60, HFA15TB60-1
International
Bulletin PD-2.334 rev. C 11/03 IDR Rech fl er
Electrical Characteristics tt To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
I/sm Cathode Anode Breakdown Voltage 600 V IR = 100pA
1.3 1.7 IF = 15A
VFM Max Forward Voltage 1.5 2.0 V IF = 30A See Fig. 1
1.2 1.6 IF =15A,TJ =125°C
IRM Max Reverse Leakage Current 1.0 10 pA VR = VR Rated See Fig. 2
400 1000 To = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance 25 50 pF VR = 200V See Fig. 3
. Measured lead to lead 5mm from
Ls Series Inductance 8.0 nH
package body
Dynamic Recovery Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 19 IF = 1.0A, dir/dt = 200/Ups, VR = 30V
tm See Fig. 5 42 60 ns TJ = 25°C
trr2 74 120 T: = 125°C IF = 15A
IRRW Peak Recovery Current 4.0 6.0 A TJ = 25°C
IRRMZ See Fig. 6 6.5 10 TJ=125°C VR = 200V
Qm Revers_e Recovery Charge 84 180 nC Tu = 25°C
an See Fig. 7 241 600 TJ = 125°C dir/dt = 200Alps
di(rec)M/dt1 Peak Rate of Fall of Recovery Current 188 Alps T: = 25''C
di(rec)M/dt2 During tr, See Fig. 8 160 TJ = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tlead G) Lead Temperature 300 "C
RthJC Thermal Resistance, Junction to Case 1.7
RthJA © Thermal Resistance, Junction to Ambient 80 KNV
RthCS © Thermal Resistance, Case to Heat Sink 0.5
. 2.0 g
Wt Weight 0.07 (oz)
. 6.0 12 Kg-cm
T Mounting Torque 5.0 10 Ibf-in
C) 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
