HFA08TB120STRL ,1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageapplications where highspeed, high efficiency is needed.Absolute Maximum Ratings Param ..
HFA08TB60 ,600V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 1.4V• Ultrafast Recovery F4• Ultrasoft RecoveryI = 8.0AF(AV)• Very Low IRRMQ (t ..
HFA08TB60. ,600V 8A HEXFRED Discrete Diode in a TO-220AC packagefeaturesextremely low values of peak recovery current (I ) and does not exhibit anyRRMtendency to " ..
HFA08TB60.. ,600V 8A HEXFRED Discrete Diode in a TO-220AC packageapplications where high speed, high efficiencyis needed.Absolute Maximum Ratings Param ..
HFA08TB60PBF ,600V 8A UltraFast Recovery Diode packaged in TO-220AC packageapplications where high speed, high efficiency is needed. Standard Pack Base part number Pa ..
HFA08TB60S ,600V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR(K)• Ultrafast RecoveryV (typ.)* = 1.4VBASE F• Ultrasoft Recovery+I = 8.0AF(AV)2• ..
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HM628512LFP-7SL , 524288-word x 8-bit High Speed CMOS Static RAM
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HFA08TB120S-HFA08TB120STRL
1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
International
Bulletin PD-20603 rev.B 11/03
lean Rectifier HFA08TB120S
HEXFRED" Ultrafast, Soft Recovery Diode
Features Base VR = 1200V
. Ultrafast Recovery Cathode V . * = 2.4V
. Ultrasoft Recovery 2 F(typ )
. Very Low IRRM
. Very Low er
. Specified at Operating Conditions
di(rec)M/dt (typ.)* = MA/ps
|F(AV) = 8.0A
Qrr(typ.)=140nC
IRRM(typ.) = 4.5A
trr(typ.) = 28ns
Benefits
. Reduced RFI and EMI 1 3
. Reduced Power Loss in Diode and Switching NIC Anode
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier‘s HFA08TB120S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120S
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-of" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly Iowerswitching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08TB120S is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max. Units
VR Cathode-to-Ar) Voltage 1200 V
IF @ Tc = 100°C Continuous Forward Current 8.0
IFSM Single Pulse Forward Current 130 A
IFRM Maximum Repetitive FonNard Current 32
Pp @ Tc = 25''C Maximum Power Dissipation 73.5 W
Pro @ Tc = 100°C Maximum Power Dissipation 29
TJ Operating Junction and o
TSTG Storage Temperature Range -55 to +150 C
* 125°C
HFA08TB120S
Bulletin PD-20603 rev.B 11/03
International
1:212 Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 1200 - - V IR = 100pA
- 2.6 3.3 IF = 8.0A
VFM Max Forward Voltage - 3.4 4.3 V ls = 16A
- 2.4 3.1 IF = 8.0A, To =125°C
IRM Max Reverse Leakage Current - 0.31 IO pA VR = VR Rated
- 135 1000 To = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 11 20 pF VR = 200V
Ls Series Inductance _ 8.0 _ nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ To = 25°C
(unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
tn Reverse Recovery Time - 28 - IF = 1.0A, dir/dt = 200A/ps, VR = 30V
trr1 See Fig. 5 - 63 95 ns To = 25°C
trr2 - 106 160 To =125°C IF = 8.0A
|RRM1 Peak Recovery Current - 4.5 8.0 A To = 25°C
|RRM2 See Fig. 6 - 6.2 11 To = 125°C VR = 200V
Qm Reverse Recovery Charge - 140 380 no To = 25°C
an See Fig. 7 - 335 880 To = 125°C diddt = 200A/ps
di(rec)M/dt1 Peak Rate of Fall of Recovery Current - 133 - A /ps To = 25°C
di(,ec)M/dt2 During tr, See Fig. 8 -- 85 -- To = 125°C
Thermal - Mechanical Characteristics
Parameter Min. Typ. Max. Units
Tes co Lead Temperature - - 300 ''C
Rinsc Thermal Resistance, Junction to Case - - 1.7 KM
RNA © Thermal Resistance, Junction to Ambient - - 40
Wt Weight - 2.0 - g
- 0.07 - (oz)
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
