HFA08TA60CS ,600V 8A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
HFA08TB120 ,1200V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 2.4VF 4• Ultrafast RecoveryI = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nCr ..
HFA08TB120S ,1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeatures V = 1200VRBaseCathode• Ultrafast RecoveryV (typ.)* = 2.4VF2• Ultrasoft RecoveryI = 8.0AF ..
HFA08TB120STRL ,1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageapplications where highspeed, high efficiency is needed.Absolute Maximum Ratings Param ..
HFA08TB60 ,600V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 1.4V• Ultrafast Recovery F4• Ultrasoft RecoveryI = 8.0AF(AV)• Very Low IRRMQ (t ..
HFA08TB60. ,600V 8A HEXFRED Discrete Diode in a TO-220AC packagefeaturesextremely low values of peak recovery current (I ) and does not exhibit anyRRMtendency to " ..
HM628512CLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM628512CLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HM628512CLTTI-5 , Wide Temperature Range Version 4 M SRAM (512-kword ´ 8-bit)
HM628512CLTTI-7 , Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)
HM628512FP-7 , 524288-word x 8-bit High Speed CMOS Static RAM
HM628512LFP-7SL , 524288-word x 8-bit High Speed CMOS Static RAM
HFA08TA60CS
600V 8A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) package
International
Bulletin PD -20058
TOR, Rectifier HFA08TA60CS
HEXFRED'" Ultrafast, Soft Recovery Diode
Features 2 VR = 600V
. Ultrafast Recovery
. Ultrasoft Recovery VF = 1.8V
. Very LOWIRRM
. Very Low Qrr * -
. Specified at Operating Conditions L Z G, - 40nC
Benefits 1 3 di(rec)M/dt * = 280A/ps
. Reduced RFI and EMI
* 125°C
. Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA08TA60CS is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics
which result in performance which is unsurpassed by any rectifier previously
available. With basic ratings of 600 volts and 4 amps per Leg continuous
current, the HFA08TA60CS is especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to "snap-off" during the h, portion of
recovery. The HEXFRED features combine to offer designers a rectifier with
lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly
reduce snubbing, component count and heatsink sizes. The HEXFRED
HFA08TA60CS is ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max Units
VR Cathode-to-Anode Voltage 600 V
IF @ To = 100''C Continuous Forward Current 4.0
IFSM Single Pulse Forward Current 25 A
IFRM Maximum Repetitive Forward Current 16
Po @ Tc = 25°C Maximum Power Dissipation 25 W
Po @ To = 100°C Maximum Power Dissipation 10
T: Operating Junction and
Tsrs Storage Temperature Range -55 to +150 C
HFA08TA60CS International
Bulletin PD-20058 01/01 IDR Rech fl er
Electrical Characteristics ti) To = 25''C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 V IR = 100pA
1.5 1.8 IF = 4.0A
VFM Max Forward Voltage 1.8 2.2 V IF = 8.0A See Fig. 1
1.4 1.7 IF=4.0A, T: = 125°C
IRM Max Reverse Leakage Current 0.17 3.0 pA I/n = VR Rated See Fig. 2
44 300 TJ = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance 4.0 8.0 pF VR = 200V See Fig. 3
. Measured lead to lead 5mm from
Ls Series Inductance 8.0 nH
package body
Dynamic Recovery Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 17 IF = 1.0A, dif/dt = 200A/ps, VR = 30V
tm See Fig. 5, 6 & 16 28 42 ns T: = 25°C
trr2 38 57 T, = 125''C IF = 4.0A
IRRM1 Peak Recovery Current 2.9 5.2 T: = 25°C
IRRMZ See Fig. " 8 3.7 6.7 T, =125°C VR = 200V
Qm Reverse Recovery Charge 40 60 T: = 25°C
an See Fig. 9 & 10 70 105 T, = 125°C di/dt = 200Nps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 280 T., = 25°C
di(rec)M/dt2 During tr, See Fig. 11 & 12 235 To = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tlead® Lead Temperature 300 ''C
Reuc Thermal Resistance, Junction to Case 5.0 KM
RWA® Thermal Resistance, Junction to Ambient 80
Wt Weight 2.0 g
0.07 (oz)
T Mounting Torque 6.0 12 Kg-cm
5.0 10 Ibf-in
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
