HFA08PB120 ,1200V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeaturesV (typ.)* = 2.4VF • Ultrafast Recovery 4I = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nC• ..
HFA08PB60 ,600V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures V = 600VRCATHODE• Ultrafast RecoveryV (typ.)* = 1.4VF4• Ultrasoft RecoveryI = 8.0AF(AV)• V ..
HFA08SD60S ,600V 8A HEXFRED Discrete Diode in a D-Pak packageapplicationswhere high speed and reduced switching losses are designrequirements.D - PAKAbsolute M ..
HFA08SD60SPBF , Ultrafast Soft Recovery Diode, 8 A
HFA08TA60C ,600V 8A HEXFRED Common Cathode Diode in a TO-220AB packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
HFA08TA60CS ,600V 8A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
HM628512CLP-7SL , 4 M SRAM (512-kword x 8-bit)
HM628512CLPI-7 , Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)
HM628512CLTT-5 , 4 M SRAM (512-kword x 8-bit)
HM628512CLTT-5SL , 4 M SRAM (512-kword ´ 8-bit)
HM628512CLTT-5SL , 4 M SRAM (512-kword ´ 8-bit)
HM628512CLTT-7 , 4 M SRAM (512-kword x 8-bit)
HFA08PB120
1200V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
Bulletin PD -2.365 rev.B 11/00
International
TOR Rectifier HFA08PB120
HEXFRED'" Ultrafast, Soft Recovery Diode
F m I/e = 1200V
eatures 0“”
V . * = 2.4V
. UltrafastRecovery ' :(typ )_* 8 0A
. UltrasoftRecovery F (AV) - .
. Very Low IRRM Qn(typ.)= 140nC
. Very Low G, 2 IRRM (typ.) = 4.5A
. Specified at Operating Conditions trr (typ.) = 28ns
B en efits 2 dim) M Mt (typ.) = 85A lus
. Reduced RFI and EMI
. Reduced Power Loss in Diode and Switching
Transistor
. HigherFrequencyOperation
. Reduced Snubbing
. Reduced Parts Count
TO-247AC (Modified)
Description
International Rectfer's HFA08PB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectfer previously available. With basic ratings of 1200 volts and 8
amps continuous current, the HFA08PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM) and
does not exhibit anytendency to "snap-off" during the tr, portion of recovery. The HEXFRED
features combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA08PB120 is ideally suited for applications in powersupplies and
power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max Units
VR Cathode-to-AnodeVoltage 1200 V
IF @ Tc = 100°C Continuous F orward Current 8.0
IFSM Single Pulse Forward Current 130 A
IFRM Maximum Repetitive Forward Current 32
PD @ Tc = 25°C Maximum Power Dissipation 73.5 W
PD @ Tc = 100°C Maximum Power Dissipation 29
T: Operating Junction and - 55 to 150 ''C
TSTG StorageTemperature Range
A 125°C
HFA08PB120
Bulletin PD-2.365 rev.B 11/00
International
IEER Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown 1200 - - V IR = 100pA
Voltage
VFM Max. Forward Voltage - 2.6 3.3 V IF = 8.0A
- 3.4 4.3 IF = 16A See Fig. 1
- 2.4 3.1 IF = 8.0A, To =125°C
IRM Max. Reverse Leakage - 0.31 10 uA VR = VR Rated See Fig. 2
Current - 135 1000 To = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 11 20 pF VR = 200V See Fig. 3
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @
To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse RecoveryTime - 28 - ns IF = 1.0A, dir/dt = 200A/ps, VR = 30V
trr1 See Fig. 5, 10 - 63 95 To = 25°C IF = 8.0A
trr2 - 106 160 To = 125°C VR = 200V
|RRM1 Peak Recovery Current - 4.5 8.0 A TJ = 25°C di f/dt = 200Alps
IRRMZ See Fig. 6 - 6.2 11 TJ =125°C
Qm Reverse RecoveryCharge - 140 380 nC To = 25°C
er2 See Fig. 7 - 335 880 T: = 125''C
di(,ec)M/dt1 Peak Rate of Recovery - 133 - Alps To = 25''C
di(rec)M/dt2 Current During tb See Fig. 8 - 85 - TJ = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tlead OD Lead Temperature - - 300 "C
Rthoc Thermal Resistance, Junction to Case - - 1.7 k/W
RthJA © Thermal Resistance, Junctionto Ambient - - 40
RthCSG) Thermal Resistance, Case to Heat Sink - 0.25 -
Wt Weight - 6.0 - g
- 0.21 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 lbf-in
OD 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
co Mounting Surface, Flat, Smooth and Greased
