HFA06TB120 ,1200V 6A HEXFRED Discrete Diode in a TO-220AC packageFeaturesCATHODEV = 1200VR• Ultrafast RecoveryV (typ.)* = 2.4VF4• Ultrasoft RecoveryI = 6.0A• Very L ..
HFA06TB120S ,1200V 6A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeatures• Ultrafast Recovery(K)V = 1200VR• Ultrasoft RecoveryBASE• Very Low I V (typ.)* = 2.4VRRM ..
HFA08PB120 ,1200V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeaturesV (typ.)* = 2.4VF • Ultrafast Recovery 4I = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nC• ..
HFA08PB60 ,600V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures V = 600VRCATHODE• Ultrafast RecoveryV (typ.)* = 1.4VF4• Ultrasoft RecoveryI = 8.0AF(AV)• V ..
HFA08SD60S ,600V 8A HEXFRED Discrete Diode in a D-Pak packageapplicationswhere high speed and reduced switching losses are designrequirements.D - PAKAbsolute M ..
HFA08SD60SPBF , Ultrafast Soft Recovery Diode, 8 A
HM628512CLP-7 , 4 M SRAM (512-kword x 8-bit)
HM628512CLP-7SL , 4 M SRAM (512-kword x 8-bit)
HM628512CLPI-7 , Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)
HM628512CLTT-5 , 4 M SRAM (512-kword x 8-bit)
HM628512CLTT-5SL , 4 M SRAM (512-kword ´ 8-bit)
HM628512CLTT-5SL , 4 M SRAM (512-kword ´ 8-bit)
HFA06TB120
1200V 6A HEXFRED Discrete Diode in a TO-220AC package
International
TOR Rectifier
Bulletin PD-2.382 rev.D 12/00
H FA06TB120
HEXFRED"
Ultrafast, Soft Recovery Diode
Featu res
. Ultrafast Recovery
. Ultrasoft Recovery '
. Very Low IRRM
. Very Low Qrr
. Specified atOperating Conditions 2
Benefits , 3
. Reduced RFI and EMI mm "I"
VR = 1200V
VF(typ.)* = 2.4V
|F(AV) = 6.0A
Qn(typ.)=116nC
|RRM(typ-) = 4.4A
trr(typ.) = 26ns
di(,ec)M/dt (typ.)* = 100A/ps
. Reduced Power Loss in Diode and Switching
Transistor
. HigherFrequencyOperation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination ofcharacteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1 200 volts and
6 amps continuous current, the HFA06TB120 is especially well suited for use as the
companion diode for lGBTs and MOSFETs. In addition to ultra fast recoverytime, the
HEXFRED product line features extremely low values of peak recovery current (IRRM)
and does not exhibit anytendencyto "snap-off" during thetb portion ofrecovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing, component
count and heatsink sizes. The HEXFRED HFA06TB120 is ideally suited for applications
in powersupplies and power conversion systems (such as inverters), motordrives, and
many other similar applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
TO-220AC
Parameter
Max. Units
VR Cathodeto-Anode Voltage
1200 V
V @ Tc = 100°C Continuous Forward Current
IFSM Single Pulse Forward Current
IFRM Maximum Repetitive Forward Current
PD @ To = 25''C Maximum Power Dissipation
Po © Tc = 100"C Maximum Power Dissipation
To Operating Junction and
TSTG Storage Temperature Range
-55 to +150 "C
* 125°C
H FA06TB1 20
Bulletin PD-2.382 rev. D 12/00
International
IEER Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown 1200 - - V IR = 100pA
Voltage
VFM Max. Forward Voltage - 2.7 3.0 IF = 6.0A
- 3.5 3.9 V IF = 12A
- 2.4 2.8 IF = 6.0A, To = 125°C
IRM Max. Reverse LeakageCurrent - 0.26 5.0 VR = VR Rated
- 110 500 “A Tu = 125°C, VR = 08va Rated
CT Junction Capacitance - 9.0 14 pF VR = 200V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @
To = 25°C (unless othe
Mise specified)
Parameter Min. Typ. Max Units Test Conditions
trr Reverse RecoveryTime - 26 - IF = 1.0A, difldt = 200A/ps, VR = 30V
tm - 53 80 ns T: = 25''C
tra - 87 130 T: = 125''C IF = 6.0A
IRRM1 Peak Recovery Current - 4.4 8.0 A T: = 25''C
IRRM2 - 5.0 9.0 To = 125°C VR = 200V
Qm Reverse Recovery Charge - 116 320 T: = 25°C
an - 233 585 nC T: = 125°C Wdt = 200Alps
di(rec)M/dt1 Peak Rate of Recovery - 180 - T: = 25''C
di(rec)M/d12 Current During tb - 100 - Alps T: = 125°C
Thermal - Mechanical Characteristics
Parameter Min. Typ. Max. Units
Tlead © Lead Temperature - - 300 "C
Rthoc Thermal Resistance, Junction to Case - - 2.0
RNA © Thermal Resistance, Junction to Ambient --.-.- -.-.-.- 80 K/W
Rthcso Thermal Resistance, Case to Heat Sink - 0.5 -
Wt Weight - 2.0 - g
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 -.-.-.- 10 Ibf-in
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
