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HCF4070BM1STN/a646avaiQUAD EXCLUSIVE OR GATE
HCF4070M013TRST ?N/a27510avaiQUAD EXCLUSIVE OR GATE
HCF4070M013TRSTN/a30000avaiQUAD EXCLUSIVE OR GATE


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HCF4070BM1-HCF4070M013TR
QUAD EXCLUSIVE OR GATE
1/7September 2001 MEDIUM-SPEED OPERATION
tPHL = tPLH = 70ns (Typ.) at CL = 50 pF and
VDD = 10V QUIESCENT CURRENT SPECIFIED UP TO
20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION

The HCF4070B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4070B contain four independent
exclusive OR gates. This device provide the
system designer with a means for direct
implementation of the exclusive-OR. For
applications as logical comparators, adders/
subtractors, parity generator and checkers.
HCF4070B

QUAD EXCLUSIVE OR GATE
PIN CONNECTION
ORDER CODES
HCF4070B
2/7
INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
HCF4070B
3/7
DC SPECIFICATIONS

The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
HCF4070B
4/7
TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)


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