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HD64F2633F25 , Series of Microcomputers (MCUs: microcomputer units)
HD64F3334YF16 , Old Company Name in Catalogs and Other Documents
HD64F3334YF16 , Old Company Name in Catalogs and Other Documents
HD64F3334YFLH16 , Hitachi Single Chip Microcomputer
HD64F3334YFLH16 , Hitachi Single Chip Microcomputer
HD64F3334YTF16 , Old Company Name in Catalogs and Other Documents
HCF4068
8-INPUT NAND/AND GATE
1/8September 2001 MEDIUM-SPEED OPERATION
tPHL, tPLH = 75ns (Typ.) at 10V BUFFERED OUTPUT QUIESCENT CURRENT SPECIFIED UP TO
20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTIONThe HCF4068B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4068B 8 INPUT NAND/AND GATE
provide the system designer with direct
implementation of the positive-logic 8-input NAND
and AND functions and supplements the existing
family of CMOS gates.
HCF4068B8 INPUT NAND/AND GATE
PIN CONNECTION
ORDER CODES
HCF4068B2/8
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLES
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
HCF4068B3/8
DC SPECIFICATIONS The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
HCF4068B4/8
TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM 1 : PROPAGATION DELAY TIMES FOR K OUTPUT (AND FUNCTION) (f=1MHz; 50% duty cycle)
HCF4068B5/8
WAVEFORM 2 : PROPAGATION DELAY TIMES FOR J OUTPUT (NAND FUNCTION)(f=1MHz; 50% duty cycle)
