HCF4016M013TR ,QUAD BILATERAL SWITCHAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
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HCF4016BM1-HCF4016M013TR
QUAD BILATERAL SWITCH
1/9September 2001 20V DIGITAL OR ±10V PEAK TO PEAK
SWITCHING 280Ω TYPICAL ON RESISTANCE FOR 15V
OPERATION SWITCH ON RESISTANCE MATCHED TO
WITHIN 10Ω TYP. OVER 15V SIGNAL INPUT
RANGE HIGH ON/OFF OUTPUT VOLTAGE RATIO :
65dB TYP. at fIS = 10KHz, RL = 10KΩ HIGH DEGREE OF LINEARITY : < 0.5%
DISTORTION TYP. at fIS = 1KHz, VIS = 5 Vpp, DD - VSS > 10V, RL = 10KΩ EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET
CURRENT AND HIGH EFFECTIVE OFF
RESISTANCE : 100pA TYP.
at VDD - VSS = 18V, Tamb = 25°C EXTREMELY HIGH CONTROL INPUT
IMPEDANCE (control circuit isolated from
signal circuit 1012 Ω typ.) LOW CROSSTALK BETWEEN SWITCHES :
50dB Typ. at fIS = 0.9MHz, RL = 1KΩ MATCHED CONTROL - INPUT TO SIGNAL
OUTPUT CAPACITANCE : REDUCES
OUTPUT SIGNAL TRANSIENTS FREQUENCY RESPONSE SWITCH ON :
40MHz (Typ.) QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTIONThe HCF4016B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4016B is a QUAD BILATERAL SWITCH
intended for the transmission or multiplexing of
analog or digital signals.
Each of the four independent bilateral switches
has a single control signal input which
simultaneously biases both the p and n device in a
given switch ON or OFF.
HCF4016BQUAD BILATERAL SWITCH
PIN CONNECTION
ORDER CODES
HCF4016B2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
HCF4016B3/9
RECOMMENDED OPERATING CONDITIONS
DC SPECIFICATIONS
HCF4016B4/9
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, CL = 50pF, all input square wave rise and
fall time = 20 ns )
(Δ) Symmetrical about OV
HCF4016B5/9
TYPICAL "ON" RESISTANCE CHARACTERISTICS, T amb = 25°C
* Variation from a perfect switch, RON = 0Ω
TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
HCF4016B6/9
SWITCHING CARACTERISTICS TEST CIRCUIT