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HCF4012
DUAL 4 INPUT NAND GATES
1/7September 2001 PROPAGATION DELAY TIME
tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO
20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTIONThe HCF4012B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4012B DUAL 4-INPUT NAND GATE
provides the system designer with direct
implementation of the NAND function and
supplement the existing family of CMOS gates. All
inputs and outputs are buffered.
HCF4012BDUAL 4 INPUT NAND GATE
PIN CONNECTION
ORDER CODES
HCF4012B2/7
INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
HCF4012B3/7
DC SPECIFICATIONS The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
HCF4012B4/7
TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
