HCF4011B Fast Delivery |IC PHOENIX CO.,LIMITED

HCF4011B ,NAND GATESELECTRICAL CHARACTERISTICS (over recommended operating conditions)Test Conditions ValueSymbol Param ..
HCF4011BEY ,QUAD 2 INPUT NAND GATESHCF4011BQUAD 2 INPUT NAND GATE ■ PROPAGATION DELAY TIME t = 60ns (Typ.) at V = 10V PD DD■ BUFFERE ..
HCF4011BEY ,QUAD 2 INPUT NAND GATESAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
HCF4011BM1 ,QUAD 2 INPUT NAND GATESLOGIC DIAGRAM HL HHH L
HCF4011M013TR ,QUAD 2 INPUT NAND GATESABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitV Supply Voltage-0.5 to +22 VDDV DC Input ..
HCF4011M013TR ,QUAD 2 INPUT NAND GATESAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
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HCF4011B
NAND GATES
C4011B/12B/23B F4011B/12B/23 BNAND GATES
DESCRIPTION PROPAGATION DELAY TIME= 60ns (typ.) AT= 50pF, VDD= 10V. BUFFERED INPUTS AND OUTPUTS. QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE. INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE. 100% TESTED FOR QUIESCENT CURRENT. 5V, 10V AND 15V PARAMETRIC RATINGS. MEETS ALLREQUIREMENTS OF JEDECTEN-
TATIVE STANDARDNo. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
QUAD2 INPUT HCC/HCF 4011B
DUAL4 INPUT HCC/HCF 4012B
TRIPLE3 INPUT HCC/HCF 4023B
The HCC4011B, HCC4012B and HCC4023B (ex-
tended temperature range) and HCF4011B,
HCF4012B and HCF4023B (intermediate tempera-
ture range) are monolithic, integrated circuit, avail-
able in 14-lead dual in-line plastic or ceramic
package and plastic micropackage.
The HCC/HCF4011B, HCC/HCF4012B and
HCC/HCF4023B NAND gates provide the system
designer with direct implementationof the NAND
function and supplement the existing family of
COS/MOS gates.All inputs and outputs are buf-
fered.
PIN CONNECTIONS
(Plastic Package)
(Ceramic Frit SealPackage)
(Micro Package)
(Plastic Chip Carrier)
ORDER CODES:
HCC40XXBF HCF40XXBM1
HCF40XXBEY HCF40XXBC1
4011B 4012B 4023B
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDD* Supply Voltage: HCC Types
HCF Types 0.5to+20 0.5to+18 Input Voltage – 0.5to VDD+ 0.5 V DC Input Current (any one input) ±10 mA
Ptot Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top= Full Package-temperature Range
Top Operating Temperature: HCC Types
HCF Types
–55to+ 125
–40to+85stg Storage Temperature –65to+ 150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
VDD Supply Voltage: HCC Types
HCF Types
3to18
3to15 Input Voltage 0to VDD V
Top Operating Temperature: HCC Types
HCF Types
–55to+ 125
–40to+85
Stresses above thoselisted under”Absolute Maximum Ratings” may cause permanent damagetothe device. Thisisa stress rating onlyand
functionaloperationof thedeviceatthese orany otherconditionsabove thoseindicatedinthe operationalsectionsof thisspecification isnotimplied.
Exposureto absolute maximum rating conditions forexternal periods may affect device reliability. Allvoltage values arereferredtoVSS pinvoltage.
HCC/HFC4011B/12B/23B
SCHEMATIC AND LOGIC DIAGRAMS
4011B
4023B
4012B
HCC/HCF4011B/12B/23B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Value VO |IO|VDD TLow* 25°CTHigh*Symbol Parameter
(V) (V) (μA) (V) Min. Max. Min. Typ. Max. Min. Max.
Unit Quiescent
Current HCC
Types
0/5 5 0.25 0.01 0.25 7.5
0/10 10 0.5 0.01 0.5 15
0/15 15 1 0.01 1 30
0/20 20 5 0.02 5 150
HCF
Types5 5 1 0.01 1 7.5
0/10 10 2 0.01 2 15
0/15 15 4 0.01 4 30
VOH Output High
Voltage
0/5 <1 5 4.95 4.95 4.950/10 <1 10 9.95 9.95 9.95
0/15 <1 15 14.95 14.95 14.95
VOL Output Low
Voltage
5/0 <1 5 0.05 0.05 0.0510/0 <1 10 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
VIH Input High
Voltage
0.5/4.5 <1 5 3.5 3.5 3.51/9 <1 10 7 7 7
1.5/13.5<1 15 11 11 11
VIL Input Low
Voltage
4.5/0.5 <1 5 1.5 1.5 1.59/1 <1 10 3 3 3
13.5/1.5<1 15 4 4 4
IOH Output
Drive
Current HCC
Types
0/5 2.5 5 –2 – 1.6– 3.2 – 1.15
0/5 4.6 5 – 0.64 – 0.51–1 – 0.36
0/10 9.5 10 – 1.6 – 1.3– 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4– 6.8 – 2.4
HCF
Types
0/5 2.5 5 – 1.53 – 1.36– 3.2 – 1.1
0/5 4.6 5 – 0.52 – 0.44–1 – 0.36
0/10 9.5 10 – 1.3 – 1.1– 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0– 6.8 – 2.4
IOL Output
Sink
Current
HCC
Types
0/5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
HCF
Types
0/5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4
IIH,IIL Input
Leakage
Current
HCC
Types
0/18
Any Input ± 0.1 ±10–5± 0.1 ±1
HCF
Types
0/15 15 ± 0.3 ±10–5± 0.3 ±1 Input Capacitance Any Input 5 7.5 pF
*TLOW=– 55°Cfor HCC device: –40°Cfor HCFdevice.
HCC/HFC4011B/12B/23B
TEST CIRCUITS
Quiescent Device Current. Noise Immunity.
Input Leakage Current.
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =25°C,CL= 50pF,RL= 200kΩ,
typical temperature coefficientforall VDD valuesis 0.3%/°C,all input rise and fall times= 20ns)
ValueSymbol Parameter Test Conditions
VDD (V) Min. Typ. Max. Unit PLH,tPHL Propagation Delay Time 5 125 25010 60 120 45 90
tTHL,tTLH Transition Time 5 100 20010 50 100 40 80
HCC/HCF4011B/12B/23B
Minimum Output High (source) Current Charac-
teristics.
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Typical Output Low (sink) Current Characteristics.
Typical Propa gation Delay Time per Gateasa
Functionof Load Capacitance.
Typical Transition Time vs. Load Capacitance.
HCC/HFC4011B/12B/23B

Partno	Mfg	Dc	Qty	Available	Descript
HCF4011B	STM	N/a	990	avai	NAND GATES