HCF4010M013TR ,HEX BUFFER/CONVERTERSAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
HCF4011 ,QUAD 2 INPUT NAND GATESHCF4011BQUAD 2 INPUT NAND GATE ■ PROPAGATION DELAY TIME t = 60ns (Typ.) at V = 10V PD DD■ BUFFERE ..
HCF4011B ,NAND GATESELECTRICAL CHARACTERISTICS (over recommended operating conditions)Test Conditions ValueSymbol Param ..
HCF4011BEY ,QUAD 2 INPUT NAND GATESHCF4011BQUAD 2 INPUT NAND GATE ■ PROPAGATION DELAY TIME t = 60ns (Typ.) at V = 10V PD DD■ BUFFERE ..
HCF4011BEY ,QUAD 2 INPUT NAND GATESAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
HCF4011BM1 ,QUAD 2 INPUT NAND GATESLOGIC DIAGRAM HL HHH L
HD64F2138AFA20 , Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2100 Series
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HD64F2148FA20 , Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2100 Series
HCF4010BM1-HCF4010M013TR
HEX BUFFER/CONVERTERS
1/8July 2002 PROPAGATION DELAY TIME tPD = 40ns
(TYP.) at VDD = 10V CL = 50pF HIGH TO LOW LEVEL LOGIC CONVERSION MULTIPLEXER: 1 TO 6 OR 6 TO 1 HIGH "SINK" AND "SOURCE" CURRENT
CAPABILITY QUIESCENT CURRENT SPECIFIED UP TO
20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTIONThe HCF4010B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
It is an non inverting Hex Buffer/Converter and
can be used as CMOS to TTL or DTL logic level
converters as current "sink" ot "source" drivers or
as multiplexer (1 to 6).
It is a preferred replacement of HCF4050B in
buffer applications.
HCF4010BHEX BUFFER/CONVERTER (NON INVERTING)
PIN CONNECTION
ORDER CODES
HCF4010B2/8
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS This device has High to Low level voltage conversion capability only
HCF4010B3/8
DC SPECIFICATION The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
HCF4010B4/8
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
(*) Typical temperature coefficent for all VDD value is 0.3 %/°C.
TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
HCF4010B5/8
WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)