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HCF4007U
DUAL COMPLEMENTARY PAIR PLUS INVERTER
1/9March 2004 STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS MEDIUM SPEED OPERATIONPD= 30ns (Typ.)AT 10V QUIESCENT CURRENT SPECIFIED UP TO
20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENTI= 100nA (MAX)ATVDD =18VTA= 25°C 100% TESTED FOR QUIESCENT CURRENT
DESCRIPTIONThe HCF4007UBisa monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology availablein DIP and SOP packages.
The HCF4007UB type is comprised of three
n-channel and three p-channel enhancement type
MOS transistors. The transistor elements are
accessible through the package terminals to
providea convenient means for constructing the
various typical circuits as shown in typical
applications. More complex functions are possible
using multiple packages. Number shown in
parentheses indicate terminals that are connected
togetherto form the various configuration listed.
HCF4007UBDUAL COMPLEMENTARY PAIR PLUS INVERTER
PIN CONNECTION
ORDER CODES
HCF4007UB2/9
INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
ABSOLUTE MAXIMUM RATINGSAbsoluteMaximum Ratingsare those values beyond which damagetothe device mayoccur.Functional operation under these conditionsis
not implied.
All voltage valuesare referredto VSSpin voltage.
RECOMMENDED OPERATING CONDITIONS
HCF4007UB3/9
SPECIFICATIONSThe Noise Marginfor both"1"and"0" levelis:1V min. with VDD=5V,2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS(T amb= 25°C,CL= 50pF,RL= 200KΩ,tr=tf =20ns)
(*) Typical temperature coefficientforall VDD valueis 0.3%/°C.
HCF4007UB4/9
TYPICAL APPLICATIONS
TRIPLE INVERTERS: (14,2, 11); (8,13);(1, 5);(4,9)
3-INPUT NAND GATE:(1, 12, 13);(2, 14, 11);
(4, 8);(5,9)
3-INPUT NOR GATE: (13,2);(1, 11); (12, 5,8);(4,9)
DUAL BIDIRECTIONAL TRASMISSION
GATING:(1,5, 12);(2,9); (11,4); (8,13,10);(6,3)
HCF4007UB5/9
TEST CIRCUIT= 50pFor equivalent (includesjig and probe capacitance) =200KΩ =ZOUTof pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
