H11D3M ,6-pin DIP high voltage transistor OptocouplerApplications Power supply regulatorsDigital logic inputs Microprocessor inputsAppliance sensor syst ..
H11D3-X007 ,OptocouplersElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambMinimum and maximum values are te ..
H11D4 ,HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERSHIGH VOLTAGEPHOTOTRANSISTOR OPTOCOUPLERSH11D1DESCRIPTIONH11D2 The H11DX and 4N38 are phototransisto ..
H11F1 ,PHOTO FET OPTOCOUPLERS PHOTO FET OPTOCOUPLERSH11F1 H11F2 H11F3PACKAGESCHEMATICOUTP ..
H11F1 ,PHOTO FET OPTOCOUPLERSAPPLICATIONS As a variable resistor –• Isolated variable attenuator• Automatic gain control• Active ..
H11F1M ,6-Pin DIP Bilateral Analog FET Output OptocouplerApplicationsAs a remote variable resistor:Isolated variable attenuator Automatic gain controlActive ..
HCF4099 ,8-BIT ADDRESSABLE LATCHHCF4099B8 BIT ADDRESSABLE LATCH ■ SERIAL DATA INPUT - ACTIVE PARALLEL OUTPUT■ STORAGE REGISTER CAP ..
HCF4099BM1 ,8-BIT ADDRESSABLE LATCHHCF4099B8 BIT ADDRESSABLE LATCH ■ SERIAL DATA INPUT - ACTIVE PARALLEL OUTPUT■ STORAGE REGISTER CAP ..
HCF4099M013TR ,8-BIT ADDRESSABLE LATCHABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitV Supply Voltage-0.5 to +22 VDDV DC Input ..
HCF4503 ,HEX BUFFERELECTRICAL CHARACTERISTICS (over recommended operating conditions)Symbol Parameter Test Conditios V ..
HCF4511 ,BCD TO SEVEN SEGMENT LATCH DECODER DRIVESfeatures of CMOS with n-p-n bipolar outputtransistor capable of sourcing up to 25mA. Thiscapability ..
HCF4511B ,BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVERHCC/HCF4511BBCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER. HIGH-OUTPUT-SOURCING CAPABILITY (upto 25 mA) ..
H11D3M
6-pin DIP high voltage transistor Optocoupler
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers September 2009 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description ■ High voltage: The 4N38M, H11DXM and MOC8204M are photo- transistor-type optically coupled optoisolators. A gallium – MOC8204M, BV = 400V CER arsenide infrared emitting diode is coupled with a high – H11D1M, H11D2M, BV = 300V CER voltage NPN silicon phototransistor. The device is sup- – H11D3M, BV = 200V CER plied in a standard plastic six-pin dual-in-line package. ■ High isolation voltage: – 7500 V peak, 1 second AC ■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2 ■ IEC 60747-5-2 approved (ordering option V) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls Schematic Package Outlines ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER ©2007 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
