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H11D2
6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)
! ! ! - ! "!"!! The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes
optically coupled to high voltage, silicon, phototransistor detectors in a standard
6–pin DIP package. They are designed for high voltage applications and are
particularly useful in copy machines and solid state relays.
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications Copy Machines Interfacing and coupling systems of different potentials and impedances Monitor and Detection Circuits Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
INPUT LED
OUTPUT TRANSISTOR
TOTAL DEVICE Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. H11D1 is rated @ 5656 Volts peak (VISO). H11D2 is rated @ 3535 Volts peak (VISO) Otherwise they are identical, both parts built by Motorola are rated @ 7500 Volts peak (VISO) Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
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