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GT8G131
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
GT8G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G131 Strobe Flash Applications Supplied in Compact and Thin Package Requires Only a Small
Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta ��� � 25°C)
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 � 1.5 t]
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/�s.
Unit: mm
Weight: 0.080 g (typ.)
Equivalent Circuit 2 3 47 8 6
