GT8G121 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 STROBE FLASH
GT8G131 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash
GT8G132 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash
GT8G134 , Silicon N Channel IGBT Strobe Flash Applications
GT8Q101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS15.9MAX9).” 10.10.! m.|0 High Input Impedance0 High Speed : tf=0.5,us (Max.)0 Low Satur ..
GTL16923 , 18-BIT LVTTL-TO-GTL/GTL BUS TRANSCEIVER
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC1-R87-R , High Current Inductor
HC240 , Package Information Datasheet for Mature Altera Devices
HC240 , Package Information Datasheet for Mature Altera Devices
GT8G121
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT8G121 STROBE FLASH APPLICATIONS 4th Generation (Trench Gate Structure) Enhancement−Mode Low Saturation Voltage
: VCE (sat) = 7 V (Max.) (@IC = 150 A) 4 V Gate Drive
MAXIMUM RATINGS (Ta = 25°C)
ELECTRICAL CHARACTERISTICS (Ta = 25°C) These devices are MOS type. Users should follow proper ESD Handling Procedures.
Operating condition of turn-off dv / dt should be lower than 400 V / µs.
Unit: mm
Weight: 0.36g
